FUJITSU SEMICONDUCTOR LIMITED

FUJITSU Semiconductor FRAM

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FUJITSU SEMICONDUCTOR LIMITED

Shin-Yokohama Chuo Bldg., 2-100-45, Shin-Yokohama,

Kohoku-ku, Yokohama, Kanagawa, 222-0033, Japan

http://jp.fujitsu.com/fsl/en/

AD05-00033-9E July 2016

Edited: System Memory Business Unit

“FRAM”, high quality and high reliability non-volatile memory

with matured manufacturing experiences

Fujitsu Limited has offered a continuous stream of memory

products for more than 46 years since 1969. Today Fujitsu

Semiconductor Limited offers products based on Ferroelectric

Random Access Memory (FRAM), a type of high quality, high

reliability non-volatile memory.

Development of FRAM began in 1995, and Fujitsu has a track

record of more than 17 years of mass production. Fujitsu has

previously received inquiries from customers in 43 countries

all over the world regarding a diverse range of more than 200

types of applications.

FRAM has been employed for smart cards and RFID tags (Radio

Frequency IDentification tags, i.e., electronic tags) in the

customer applications, and also for power meters, automation

machinery, medical RFID tags in the industrial applications.

According to recent applications for IoT (internet of things),

ultra-low power consumption, high speed and high read/

write endurance non-volatile memory is needed. FRAM is

most suitable memory for such demands and Fujitsu has

been provided with our FRAM for wearable devices, industrial

robots, and drones etc.

Through high quality and stable product supply backed up

by our superior technical capabilities, Fujitsu has offered our

FRAM to customers who need memory reliability.

Fujitsu continues developing memory products that are

suitable for customer applications while striving to lower

power consumption, extend the operating temperature range,

and increase density.

Random Access Memory

Ferroelectric

Random Access Memory

Ferroelectric

FRAM

FRAM Features Product Lineup

Applications suited for FRAM

FRAM Product Families

FRAM Structure

Comparison between FRAM and other memories

Because FRAM has both features of a random accessibility and non-volatility, it works as

working memory and also can store data even when power is turned off. As compared

with conventional types of non-volatile memory, such as EEPROM (Electrically Erasable

and Programmable Read-Only Memory) and Flash memory, FRAM exhibits superior

performance through faster write speeds, greater read/write cycle endurance and lower

power consumption.

Fujitsu provides with FRAM from 16Kbit to 4Mbit for the SPI interface and from 4Kbit to 1Mbit for the I

C interface. Operating voltage of all

those products is 3.3V now, however, Fujitsu has been developing 1.8V-operation FRAMs. Fujitsu can offer serial I/O FRAMs with 8-pin SOP

packages for replacement of EEPROM, and also with SON (Small Outline Non-leaded package) and WL-CSP (Wafer Level Chip Size Package)

for equipping in the wearable devices.

For parallel interface FRAM from 256Kbit to 4Mbit are available with TSOP packages. 256Kbit FRAM with SOP package is also available. These

products are suited for replacement of battery back-upped SRAM and applications of low power consumption devices.

Since FRAM has strong features of fast write and 10 trillion read/write cycles guaranteed, FRAM is used in applications requiring continuous

rewriting of data, real-time recording of three-dimensional information, and robust protection of data.

Fujitsu offers solutions to meet customer requirements, such as “the need to eliminate data retention batteries,” “the need for memory that

enables data to be read/written many times,” and “the need to retain data immediately before power is cut off.”

Fujitsu has two categorized FRAM products. One is “Standalone Memory,” for general

implementation usages. Another is “FRAM-embedded LSIs,” which is customer

designed used, such as RFID LSIs and authentication LSIs.

Fujitsu has also developed FRAM-embedded LSIs which can give the maximum

superiority and performance according to customer requirements.

Fujitsu uses PZT (lead zirconate titanate) as a ferroelectric material in our FRAM. The

crystalline structure of PZT is shown in the figure on the right.

The zirconium or titanium positive ion occupies two stable positions in the lattice, and

can be moved between the positions by applying an external electric field. Since the two

stable positions are slightly displaced from the charge center, electric polarization with

two opposite direction, up or down in the figure, appears in the ferroelectric material.

Either up or down polarization can be stored even if the electric field is removed and

can be switched between each other if the opposite field is applied.

Fujitsu can define the data “0” and “1” as “up polarization” and “down polarization” of the

ferroelectric film, respectively. When an electric field is applied to a ferroelectric capacitor

which is comprised of two electrodes sandwiched a ferroelectric film, a non-linear

polarization-electric field (P-E) relation is obtained, which is called “P-E hysteresis curve”.

Switching the polarization direction by applying an electric field to rewrite the data

is generally much faster than the rewriting speed of floating gate memories, such as

EEPRAM and Flash memory, which use electron tunneling through silicon dioxide film

by applying high voltage for data rewriting.

FRAM

Non-Volatile

Great Read/

Write Cycles

High Security

Low Power

Consumption

Fast Write

Speeds

Pb (Lead)

O (Oxygen)

Zr (Zirconium) or

Ti (Titanium)

Standalone

Memory

Serial Memory

Parallel Memory

RFID LSI

Authentication LSI

Custom LSI

FRAM-embedded

LSI

FRAM

FRAM EEPROM FLASH SRAM

Memory Type

Non-volatile Non-volatile Non-volatile Volatile

Write Method

Overwrite Erase + Write Erase + Write Overwrite

Write Cycle Time

150ns 5ms 10µs 55ns

Read/Write Cycles

Unlimited

Booster Circuit

No Yes Yes No

Data Backup Battery

No No No Yes

MB85RC04V

3.3V-5V

MB85R4M2T

1.8V-3.3V

8M/16Mbits

1.8V-3.3V

MB85RC16

3.3V

MB85RC16V

MB85RC64A

3.3V

MB85RC64TA

1.8V-3.3V

MB85RC64V

MB85RS16/16N

3.3V

MB85RDP16LX(

)

1.8V

MB85RQ4ML

1.8V

MB85RS64

3.3V

MB85RS128B

3.3V

MB85R256F

3.3V

MB85R1001/2A

3.3V

MB85R4001/2A

3.3V

MB85RS64V

Parallel 3.3V

(

Parallel 1.8V-3.3V

)

256K

16K

64K

128K

Density (bit)

512K

M/16M

*: with binary counter function

MB85RC256V

3.3V-5V

MB85RC512T

1.8V-3.3V

MB85RS512T

1.8V-3.3V

MB85RC1MT

1.8V-3.3V

MB85RS256B

3.3V

MB85RS1MT

1.8V-3.3V

MB85RS2MT

1.8V-3.3V

C 3.3VI

C 1.8V I

C 5V SPI 3.3V SPI 5VSPI 1.8V

MB85RC128A

3.3V

Mass Production

Sampling

Planning

Flight Recorders/

Drive Recorders

• Drones

• Car Navigation Systems

Robots

• Industrial Robots

• Consumer Robots

Wearable Devices

• Smart Watches

• Hearing Aids

Lighting

• Lighting Equipment

• Traffic Lights

Metering

• Power Meters

• Gas, Water Meters

Networking

• Routers

• RAID Controllers

Medical

• Disposable products

• Medical Monitors

IC Cards

• Security ID Cards

• IC Cards for

Transportation

Industry Machines

• Motors, Rotary Encoders

• CNC, Control Units

Crystalline Structure of Ferroelectric Memory