© 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
DATA SHEET 2044, REV. D
S-100 SCREENING PROCEDURE
All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures,
as applicable. All testing is performed at room temperature. For testing at high and low temperatures, Group A testing is
required.
DISCRETE SEMICONDUCTORS
Reference: MIL-PRF-19500, JANTXV Level
TEST / PROCESS
MIL-STD-750 METHOD
CONDITIONS
1
Pre-cap Visual Inspection
2074 Diodes
2069 Power FETs
2072 Transistors
JANTXV level.
2
Temperature Cycling
1051
Test condition C or maximum storage
temperature, whichever is less.
20 cycles, t (extremes) 10 minutes.
3
Thermal Impedance
3161 Power FETs
3103 IGBT
3131 Bipolar Transistor
3101 Diodes
As specified
4
Hermetic Seal Fine Leak
(Not applicable to double
plug diodes and non-cavity
products)
1071
Omit for double plug diodes. Test
condition G or H. Maximum leak rate =
5x10 -8 atm-cc/s except 5x10 -7 atm-cc
for devices with internal cavity > 0.3 cc.
Maximum leak rate 5x10 -6 atm-cc/s for
cavities 3-40 cc.
(May be performed after step 9)
5
Hermetic Seal
1071
Gross Leak
6
Interim Electrical
Parameters
(Not applicable to case
mounted rectifiers).
-
Per device detail specification.
7
High Temperature Reverse
Bias (Not applicable to case
mounted rectifiers).
1039 Transistors
1042 Power FETs
1038 Diodes and Rectifiers
Condition A 80% (minimum of rated
VCB (bipolar), VGS (FET) or VDS (FET)
as applicable.
Condition B 80% (minimum) of rated
VGS.
Condition A- (Not required for case
mounted rectifiers and zeners) 80%
(minimum) of rated VR (Performed at
125 C for 45 to 100 Volt Schottky
Devices, 100 C for 30 Volt Schottky
Devices).
8
Interim Electrical
Parameters
-
Per device detail specification.
9
Power Burn-in
1039 Bipolar Transistors
1042 Power FETs
1038 Diodes, Rectifiers and Zeners
1038 Case mount Rectifiers
1040 Thyristors
Condition B 160 hours minimum.
Condition A 160 hours minimum.
Condition B 96 hours minimum.
Condition A 48 hours minimum
(performed at 125 C for 30 Volt
Schottky Devices),
96 hours minimum.
10
Final Electrical
-
Per device detail specification.
Notes: 1) Sequence and testing varies per device.
2) For diode bridges pre-cap visual is performed at the bridge assembly level prior to potting.
S-100 SCREENING PROCEDURE
© 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
DATA SHEET 2044, REV. D
HYBRIDS
Reference: MIL-PRF-38534, Class H
SCREEN
MIL-STD-883 METHOD
CONDITIONS
1
Internal Visual
2017
Condition B
2
Temperature Cycling
1010
Condition C
3
Constant Acceleration
2001
Condition A (min) Y1 orientation only.
4
Pre burn in Electrical Parameters
-
Per device detailed specification.
5
Burn-in
1015
160 hours at 125 C minimum.
6
Final Electrical Parameters
-
Per device detailed specification.
7
PDA Calculation
-
10%
8
Seal:
a. Fine
b. Gross
1014
-
9
External Visual, Mechanical
2009
-
MICROCIRCUITS
Reference: MIL-PRF-38535, Class B; and MIL-STD-883, Test Method 5004 Class B
MIL-STD-883 METHOD
CONDITIONS
1
2010
Condition B
2
1010
Condition C
3
2001
Condition E (min) Y1 orientation only.
3.1
4
-
Per device detailed specification.
5
1015
96 hours at 125 C minimum.
Per device detailed specification
6
5% max
7
-
Per device detailed specification.
8
1014
-
9
2009
-
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-
safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the
user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a
value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
S-100 SCREENING PROCEDURE