TECHNICAL DATA
DATASHEET 5435, Rev B
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SDA1007
SDA1007S
SDA1007SS
Diode Array
Devices Are Serialized
Eight 1N5615 diodes in surface mount package
Die manufactured on qualified JANS line
Built and screened to space level quality (SDA1007SS)
Quality Conformance Inspection (QCI) in accordance with MIL-PRF-38534 is performed
on each lot (SDA1007SS)
Add suffix “S” for screening per MIL-PRF-38534, Class H (SDA1007S)
Add suffix “SS” for Space Level Screening per MIL-PRF-38534, Class K (SDA1007SS)
MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE PAIR
All rating at are T
A
= 25
O
C unless otherwise specified
RATING
SYMBOL
MAX
UNIT
Peak Inverse Voltage (DC)
PIV
400
V
Average DC Output Current
T
A
= 55
o
C
T
A
= 100
o
C
I
O
1.0
0.75
A
Peak Single Cycle Surge Current
(Tp=8.3ms single half-Sine wave
superimposed on rated load)
I
fsm
10
A
Max. Operating Junction Temperature
T
J
-55 to +150
o
C
Max. Operating Ambient Temperature
T
OP
-30 to 100
o
C
Storage Temperature Range
T
stg
-65 to +175
o
C
Maximum forward voltage @3.0A
V
f
3.2
V
Maximum Instantaneous Reverse
Current At Rated (PIV)
T
A
= 25
o
C
T
A
= 100
o
C
0.5
25
A
Max. Reverse Recovery Time I
F
=0.5 A,
I
R
= 1.0A, I
RR
=0.25A
t
rr
150
ns
Thermal Resistance Junction to Case
JC
21
o
C/W
