• 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 •
• World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1004, REV. A
Formerly part number SHDG1025
1200 VOLT, 35 AMP IGBT DEVICE
HIGH SPEED, IMPROVED SCSOA
WITH FAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS (Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
P
P
A
A
R
R
A
A
M
M
E
E
T
T
E
E
R
R
S
S
Y
Y
M
M
B
B
O
O
L
L
M
M
I
I
N
N
T
T
Y
Y
P
P
M
M
A
A
X
X
U
U
N
N
I
I
T
T
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I
C
= 250 μA, V
GE
= 0V
BV
CES
- - 1200 V
Continuous Collector Current T
C
= 25
O
C
T
C
= 90
O
C
I
C
- - 40
(1)
35
A
Gate to Emitter Voltage
V
GE
- - +/-20 V
Gate-Emitter Leakage Current I
GE
= +/-20V
I
GES
- - +/-500 nA
Gate Threshold Voltage, I
C
=2mA V
GE(TH)
4.5 6.0 7.5 V
Zero Gate Voltage Collector Current
V
GE
=0V V
CE
= 1200 V, T
i
=25
o
C
V
CE
= 800 V, T
i
=125
o
C
I
CES
- - 1000
5.0
μA
mA
Collector to Emitter Saturation Voltage
I
C
= 35A, V
GE
= 15V
V
CE(SAT)
-
2.7 3.3 V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
- 8400
350
90
- pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-off Energy Loss
Turn-on Energy Loss
(I
C
= 30A, V
GE
= 15V, V
CE
= 600 V, R
G
= 5 Ω
t
d(on)
t
r
t
d(off)
t
f
E
off
E
on
-
-
-
-
-
90
50
270
80
4.7
5.5
-
-
-
-
-
nsec
mJ
mJ
Junction-to-Case Thermal Resistance
R
θJC
- - 0.35
o
C/W
SHD724502