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Photon Detection
PVG Series of Single-epitaxial-layer 1550 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Eye-Safe Range Finding
Excelitas Technologies’ PVG series of high power pulsed laser diodes are multi-quantum well devices with
active layers fabricated using advanced MOCVD epitaxial growth techniques. The devices are offered housed in
two convenient hermetic package configurations. The “S” style package is a TO-18 style low inductance
package (~5.2nH) and the “R” style is a CD 9 mm outline providing increased thermal dissipation with the
option of accommodating a rear facet monitor photodiode.
This series of devices are wavelength-centered at 1550nm primarily to take advantage of a significant increase
over AlGaAs and InGaAs lasers in the maximum permitted emission level with respect to Laser Institute of
America or International Electrotechnical Commission (IEC) requirements. It should be possible therefore to
incorporate these diodes into a system and operate them at relatively high average powers within Class I
conditions. It is however the responsibility of the user to certify their equipment as Class I and ensure that it
meets the requirements of its appropriate local regulatory agency.
The output wavelength of this series is well matched to the near peak spectral response of Excelitas InGaAs
photodiodes types C30617H, C30618H, C30619H, C30645H and C30662H, amongst others.
Key Features
Peak power to 90 Watts
Good temperature stability
Range of single element and
stacked devices
Possibility of high peak power
Class I operation
Package options available
High reliability
Applications
Eye-safe Laser Range Finder (LRF)
Optical beacons
Covert illumination
Sensing
Industrial metrology
Laser safety curtains
“Friend or Foe” identification
Available in several package types, the PVG series laser chips feature stripe
widths of 150 or 300 µm and can be stacked to further increase output
power. Other stripe widths and packages options are available upon
request.
www.excelitas.com Page 2 of 8 PVG series Rev.2014-01
PVG Series of 1550 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Industrial Range Finding
Table 1 – Characteristics at T
OP
= 23°C, t
W
= 150ns, prr = 1kHz
Parameter
PVGS1S06H
PVGS2S06H
PVGR1S12H
PVGR4S12H
Units
Minimum Optical Power at i
F
P
Omin
5
10
12
45
W
Typical Optical Power at i
F
P
Otyp
6
12
12.5
50
W
Peak forward Current
i
F
20
20
40
40
A
Typical Optical Power at i
FM
(note 1)
P
Otyp.M
12
23
23
90
W
Maximum Peak forward Current (note 1)
i
FM
40
40
80
80
A
Lasing threshold current, typical
i
TH
0.8
0.8
1.5
1.5
A
Peak Forward Voltage, typical
V
F
4
6.5
7
35
V
Number of Elements
-
1
2
1
4
Emitting area (width x height)
150 x 1.5
150 x 125
300 x 1.5
300 x 350
µm
Note: 1. Operating drive condition under reduced duty factor.
Table 2 – Generic Electro-Optical Specifications at 23°C
Parameter
Symbol
Min
Typical
Max
Units
Center wavelength of spectral envelope
λ
C
1520
1550
1580
nm
Spectral bandwidth at 50% intensity points
Δλ
13
nm
Wavelength temperature coefficient
Δλ/ΔT
0.5
nm/°C
Beam spread (FWHM) parallel to junction plane
Θ
||
19
degrees
Beam spread (FWHM) perpendicular to junction plane
Θ
|
38
degrees
Table 3 – Maximum Ratings
Parameter
Symbol
Min
Max
Units
Peak reverse voltage
V
RM
2
V
Pulse width
t
W
150
ns
Duty factor
du
0.1
%
Storage temperature
T
S
-55
105
°C
Operating temperature
T
op
-55
85
°C
Soldering for 5 seconds (leads only)
260
°C