MMDT5401
Plastic-Encapsulate
Multi-Chip (PNP+PNP) Transistor
Elektronische Bauelemente
17-Sep-2018 Rev. C Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary NPN Type Available (MMDT5551)
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MARKING
PACKAGING DIMENSION
Package MPQ Leader Size
SOT-363 3K 7 inch
ORDER INFORMATION
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-0.2 A
Collector Power Dissipation P
C
0.2 W
Junction & Storage temperature T
J
, T
STG
150,-55~+150 °C
REF.
Millimeter
REF.
Millimeter
Min.
Min.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D 0.80
1.10 K 8°
E 1.10
1.50 L 0.650 TYP.
F 0.10
0.35
Part Number Type
MMDT5401 Lead (Pb)-free
MMDT5401-C Lead (Pb)-free and Halogen-free
K4M
SOT-363
B
L
F
HC
J
D G
K
A
E
MMDT5401
Plastic-Encapsulate
Multi-Chip (PNP+PNP) Transistor
Elektronische Bauelemente
17-Sep-2018 Rev. C Page 2 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
-160 - - V I
C
= -100µA, I
E
=0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-150 - - V I
C
= -1mA, IB=0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -10µA, I
C
=0
Collector Cut-off Current I
CBO
- - -0.05 µA V
CB
= -120V, I
E
=0
Emitter Cut-off Current I
EBO
- - -0.05 µA V
EB
= -3V, I
C
=0
DC Current Gain
h
FE(1)
50 - - V
CE
= -5V, I
C
= -1mA
h
FE(2)
100 - 240 V
CE
= -5V, I
C
= -10mA
h
FE(3)
50 - - V
CE
= -5V, I
C
= -50mA
Collector-Emitter Saturation Voltage
V
CE(sat)1
- - -0.2 V I
C
= -10mA, I
B
= -1mA
V
CE(sat)2
- - -0.5 V I
C
= -50mA, I
B
= -5mA
Base-Emitter Saturation Voltage
V
BE(sat)1
- - -1 V I
C
= -10mA, I
B
= -1mA
V
BE(sat)2
- - -1 V I
C
= -50mA, I
B
= -5mA
Transition Frequency f
T
100 - - MHz
V
CE
= -10V, I
C
= -10mA,
f=100MHz
Output Capacitance C
OB
- 6 - pF V
CB
= -10V, I
E
= 0, f=1MHz
Noise Figure NF - - 8 dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
=10Ω, f=1.0kHz
CHARACTERISTIC CURVES