DATA SHEET
DESCRIPTION
The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
100 mA
Total Power Dissipation P
T
150 mW
Junction Temperature T
j
150 C
Storage TemperatureT
stg
65 to +150 C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
1.0 AV
CB
= 10 V, I
E
= 0
Emitter Cutoff Current I
EBO
1.0 AV
EB
= 1.0 V, I
C
= 0
DC Current Gainh
F
E
82 170 270 V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth Product f
T
7 GHz V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance C
re
** 0.55 1.0 pF V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain S
21
e
2
11.5 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
* Pulse Measurement PW 350 s, Duty Cycle 2 %
* The emitter terminal and the case shall be connected to the guard term inal of the three-term inal capacitance bridge.
LESHAN RADIO COMPANY, LTD.
S-L2SC3356WT1G
• We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device Marking
Shipping
L2SC3356WT1G
3000/Tape & Reel
24
10000/Tape & Reel
24
S-L2SC3356WT3G
SC-70
1
3
2
Rev.O 1/4
L2SC3356WT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L2SC3356WT1G
L2SC3356WT3G
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mWh
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0 0.5 1 2 5 10 20 30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0 0.5 1.0 105.0 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
10
20
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
LESHAN RADIO COMPANY, LTD.
L2SC3356WT1G
Rev.O 2/4
;S-L2SC3356WT1G