UNISONIC TECHNOLOGIES CO., LTD
MMBD4148
DIODE
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Copyright © 2017 Unisonic Technologies Co., Ltd QW-R601-088.B
HIGH-SPEED
SWITCHING DIODE
DESCRIPTION
The UTC MMBD4148 is designed for high-speed switching
application in hybrid thick-and thin-film circuits. The devices is
manufactured by the silicon epitaxial planar process and packed
in plastic surface mount package.
FEATURES
* Ultra-high speed
* Low forward voltage
* Fast reverse recovery time
SYMBOL
SOT-323
1
2
3
SOT-23
(JEDEC TO-236)
1
2
3
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
Package
1 2 3
Packing
MMBD4148L-AE3-R MMBD4148G-AE3-R SOT-23 NC A C Tape Reel
MMBD4148L-AL3-R MMBD4148G-AL3-R SOT-323 NC A C Tape Reel
Note: Pin assignment: A: Anode C: Cathode NC: No Connection
MARKING
SOT-23 SOT-323
MMBD4148 DIODE
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
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ABSOLUTE MAXIMUM RATINGS (T
A
=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Maximum Repetitive Reverse Voltage V
RRM
100 V
Average Rectified Forward Current I
F(AV)
250 mA
Pulse Width = 1.0 sec 1.0 A Non-repetitive Peak
Forward Surge Current
Pulse Width = 1.0 μs
I
FSM
2.0 A
Power Dissipation (Note 3) P
D
200 mW
Junction Temperature T
J
-65 ~ +150 °C
Storage Temperature T
STG
-65 ~ +150 °C
Note: 1. These ratings are based on a maximum junction temperature of 200°C.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Device mounted on FR-4 PCB minimum land pad
THERMAL DATA
CHARACTERISTIC SYMBOL RATINGS UNIT
Junction to Ambient θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
I
R
=5.0μA 75 V
Breakdown Voltage V
R
I
R
=100μA 100 V
Forward Voltage V
F
I
F
=10mA 0.855 V
V
R
=20V 25 nA
Reverse Current I
R
V
R
=75V 5.0 μA
Total Capacitance C
T
V
R
=0V, f =1.0MHz 4.0 pF
Reverse Recovery Time t
rr
I
F
=10mA, V
R
=6.0V
I
RR
=1.0mA, R
L
=100Ω
4.0 ns