2N7002KV
N-Channel
Enhancement Mode
Field Effect Transistor
Features
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source-Voltage V
DSS
60 V
Drain Current
I
D
340
mA
Total Power Dissipation
P
D
150
mW
omponents
20736 Marilla Street Chatsworth
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Revision: A 2017/06/14
Mechanical Data
www.mccsemi.com
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• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
H
alogen free available upon request by adding suffix "-HF"
•
SOT-563
Micro Commercial Components
M C C
R
Gate-Source-Voltage
V
GS
V
±20
• High density
cell design for Low R
DS(ON)
• Voltage
controlled
small signal switch
•
Rugged and reliable
• High saturation current capability
• ESD protected up to 2KV
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Operating Temperature: -55°C to+150°C
• Storage Temperature: -55°C to+150°C
• Maximum Thermal Resistance; 833
o
C/W Junction To Ambient
A
M
L
B
C
H
K
G
D
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .006 .011 0.15 0.30
B .043
.051
1.10
1.30
C
.059
.067
1.50
1.70
D .020 0.50
G .035 .043 0.90 1.10
H .059 .067 1.50 1.70
K
.020
.023
0.52
0.60
L .004 .011 0.10 0.30
M .004 .007 0.10 0.18
Revision: A 2017/06/14
www.mccsemi.com
2 of 3
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
Static Characteristics
Drain-Source Breakdown Voltage VDS VGS = 0V, ID =250µA 60 V
Gate Threshold Voltage
(note1)
VGS(th) VDS =VGS, ID =1mA 1
2.5
V
Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V 1 µA
IGSS VGS =±20V, VDS = 0V ±10 µA
Gate –Source leakage current
VGS = 4.5V, ID =200mA 1.5 Ω
Drain-Source On-Resistance
(note1)
RDS(on)
VGS =10V,ID =500mA 1.4 Ω
Diode Forward Voltage VSD VGS=0V, IS=300mA 1.5 V
Recovered charge Q
r
V
GS=0V,IS=300mA,VR=25V,
dl
s/dt=-100A/µs
30 nC
Dynamic Characteristics
(note2)
Input Capacitance Ciss 40 pF
Output Capacitance Coss 30 pF
Reverse Transfer Capacitance Crss
VDS =10V,VGS =0V,f =1MHz
10 pF
Switching Characteristics
(note2)
Turn-On Delay Time t
d(on)
10 ns
Turn-Off Delay Time t
d(off)
V
GS=10V,VDD=50V,RG=50Ω,
R
GS=50Ω, RL=250Ω
15 ns
Reverse recovery Time t
rr
V
GS=0V,IS=300mA,VR=25V,
dl
s/dt=-100A/µs
30 ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) ±21.5 ±30 V
Notes:
1.
Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
Micro Commercial Components
M C C
R
3.5
3.0