2N7002KM
N-Channel MOSFET
Features
Unit
V
DS
Drain-source Voltage 60 V
I
D
Drain Current 340 mA
P
D
Total Power Dissipation
150
mW
T
J
Operating Junction Temperature -55 to +150
к
T
STG
Storage Temperature -55 to +150
к
omponents
20736 Marilla Street Chatsworth
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Revision: A
2017/08/27
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• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• ESD Protected up to 2.5KV (HBM)
Symbol
Rating
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Rating
•
Halogen free available upon request by adding suffix "-HF"
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-Source Breakdown Voltage
(V
GS
=0Vdc, I
D
=250µAdc)
60 --- --- Vdc
V
GS(th)
Gate-Threshold Voltage
(V
DS
=V
GS
, I
D
=0.25mAdc)
1.0
1.4 2.5
Vdc
I
GSS
Gate-body Leakage
---
---
nAdc
I
DSS
Zero Gate Voltage Drain Current
(V
DS
=48Vdc, V
GS
=0Vdc)
--- --- 1
µAdc
r
DS(on)
Drain-Source On-Resistance
(V
GS
=4.5Vdc, I
D
=200mAdc)
(V
GS
=10Vdc, I
D
=500mAdc)
---
---
1.4
1.3
4.5
4.0
Ω
V
SD
Diode Forward Voltage
(V
GS
=0Vdc, I
S
=300mAdc)
---
0.97
1.5 Vdc
C
iss
Input Capacitance --- --- 40
C
OSS
Output Capacitance --- --- 30
C
rSS
Reverse Transfer
Capacitance
V
DS
=10Vdc,
V
GS
=0Vdc
f=1MHz
--- --- 10
pF
t
d(on)
Turn-on Time --- --- 10
t
d(off)
Turn-off Time --- --- 15
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---
---
(dl
s
/dt=-100A/µS)
Qr
(VGS=0V, IS=300mA,VR=25V,)
Recovered charge
--- ---
30
nC
V
DD
=50 V, R
L
=250Ω,
R
GS
=50Ω,V
GS
=10 V,
R
G
=50Ω
V
GS=0V, IS=300mA,
VR=25V,
dl
s
/dt=-100A/µS
t
rr
Reverse
recovery
time
30 ---
---
ns
RthJA Thermal Resistance fromJunction to Ambient
833
к/W
V
GS
Gate-source Voltage V
I
GSS
Gate-body Leakage
---
---
nAdc
Micro Commercial Components
M C C
R
±20
(V
GS
=±20V, V
DS
= 0V)
(V
GS
=±10V, V
DS
= 0V)
(V
GS
=±5V, V
DS
= 0V)
±10
±200
±100
---
---
SOT-723
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .045 .049 1.15 1.25
C .030 .033 0.75 0.85
E 0.031TYP. 0.80TYP.
B .045 .049 1.15 1.25
E
D .011 .015 0.27 0.37
F
F .007 .011 0.17 0.27
G .017 .020 0.43 0.50
H
J
H .003 .006 0.08 0.15
J .000 .002 0.00 0.05
1
2
3
A
B
G
D
C
1.GATE
2. SOURCE
3. DRAIN
Revision: A
2017/08/27
www.mccsemi.com
2 of 3
Micro Commercial Components
M C C
R
Typical Characteristics
10 2345
0.0
0.2
0.4
0.6
0.8
T
a
=25ć
Plused
Output Characteristics
V
GS
=10V
V
GS
=7V
V
GS
=4.5V
V
GS
=3V
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
3112
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
DS
=3V
Plused
Transfer Characteristics
T
a
=125ć
Drain Current(A)
Gate to Source Voltage V
GS
(V)
T
a
=25ć
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.4
0.8
1.2
1.6
2.0
Ta=25ć
Plused
R
DS(ON)
——I
D
On-Resistancer R
DSON
(Ω)
Drain Current I
D
(A)
V
GS
=10V
V
GS
=4.5V
422 810
0
2
4
6
8
R
DS(ON)
——V
GS
T
a
=25ć
I
D
=500mA
Plused
On-Resistancer R
DSON
(Ω)
Gate to Source Voltage V
GS
(V)
T
a
=125ć
0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
I
S
——V
SD
Plused
T
a
=125ć
Source Current I
S
(A)
Source to Drain Voltage V
SD
(V)
T
a
=25ć
25 50 75 100 125
1.0
1.1
1.2
1.3
1.4
1.5
Threshold Voltage
Threshold Voltage V
TH
(V)
Juction Temperature T
J
(ć)
I
D
=250uA