SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com Page 1
SPM1009
SPM1009A
600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE
BRIDGE MODULE
Features
Isolated base plate
Light weight low profile standard package
Aluminum Nitride substrate
High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER IGBT LEG (Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I
C
= 200 A, V
GE
= 0V
BV
CES
600
-
-
V
Continuous Collector Current T
C
= 25
O
C
T
C
= 100
O
C
I
C
-
-
30
16
A
Pulsed Collector Current, 1ms
I
CM
-
-
90
A
Gate to Emitter Voltage
V
GE
-
-
+/-20
V
Gate-Emitter Leakage Current , V
GE
= +/-20V
I
GES
-
-
+/- 100
nA
Gate Threshold Voltage, I
C
= 0.43 mA
V
GE(TH)
4.1
-
5.7
V
Zero Gate Voltage Collector Current
V
CE
= 600 V, V
GE
=0V T
i
=25
o
C
V
CE
= 480 V, V
GE
=0V T
i
=125
o
C
I
CES
-
-
-
-
0.1
1.0
mA
mA
Collector to Emitter Saturation Voltage
T
C
= 25
O
C I
C
= 16A, V
GE
= 15V
T
C
= 125
O
C I
C
= 16A, V
GE
= 15V
V
CE(SAT)
-
-
-
-
2.2
2.6
V
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
-
-
-
1630
108
50
-
-
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
23
35
220
26
-
-
-
-
ns
Turn on Energy Loss
Turn off Energy Loss (Including diode reverse recovery)
(T
j
= 25
O
C, I
C
= 16A, V
GE
= 15V, V
CE
= 400 V, R
G
= 10 )
E
on
E
off
-
-
0.69
0.33
-
-
mJ
mJ
SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com Page 2
SPM1009
SPM1009A
ULTRAFAST DIODES RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Diode Peak Inverse Voltage
PIV
600
-
V
Continuous Forward Current, T
C
= 25
O
C
T
C
= 100
O
C
I
F
20
12
A
Forward Surge Current, t
p
= 1ms
I
FSM
90
A
Diode Forward Voltage, I
F
= 16A T
C
= 25
O
C
I
F
= 16A T
C
= 125
O
C
V
F
-
-
-
-
1.9
1.8
V
V
Diode Reverse Recovery Time I
F
= 16A T
C
= 25
O
C
Diode Reverse Recovery Charge
(I
F
=16A, V
RR
=200V , di/dt=200 A/s T
C
= 25
O
C)
t
rr
Q
rr
-
-
180
1.6
-
-
ns
C
PACKAGE CHARACTERISTICS
Diode Maximum Junction-to-Case Thermal Resistance Per
Leg
R
JC
-
-
3.0
o
C/W
IGBT Maximum Junction-to -Case Thermal Resistance Per
Leg
R
JC
-
-
1.0
Maximum and Storage Junction Temperature
T
jmax
-55
-
150
o
C
Isolation to Base Plate
V
iso
-
-
2500
V
Schematic Diagram: