SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com Page 1
600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE
BRIDGE MODULE
Features
Isolated base plate
Light weight low profile standard package
Aluminum Nitride substrate
High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER IGBT LEG (Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
Collector to Emitter Breakdown Voltage
I
C
= 200 A, V
GE
= 0V
Continuous Collector Current T
C
= 25
O
C
T
C
= 100
O
C
Pulsed Collector Current, 1ms
Gate-Emitter Leakage Current , V
GE
= +/-20V
Gate Threshold Voltage, I
C
= 0.43 mA
Zero Gate Voltage Collector Current
V
CE
= 600 V, V
GE
=0V T
i
=25
o
C
V
CE
= 480 V, V
GE
=0V T
i
=125
o
C
Collector to Emitter Saturation Voltage
T
C
= 25
O
C I
C
= 16A, V
GE
= 15V
T
C
= 125
O
C I
C
= 16A, V
GE
= 15V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn on Energy Loss
Turn off Energy Loss (Including diode reverse recovery)
(T
j
= 25
O
C, I
C
= 16A, V
GE
= 15V, V
CE
= 400 V, R
G
= 10 )