Datasheet
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© 2014 ROHM Co., Ltd. All rights reserved.
EMH11 / UMH11N / IMH11A
NPN 100mA 50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
Outline
Features
1)
Built
-In Biasing Resistors, R
1
= R
2
= 10k
.
2)
T
wo DTC114E chips in one package.
3)
Built
-in bias resistors enable the configuration of
an inv
erter circuit without connecting external
input resistors (see inner circuit).
4)
T
he bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing Inner circuit
of
the input. They also have the advantage of
com
pletely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
oper
ation, making the circuit design easy.
6)
Lead Fr
ee/RoHS Compliant.
Application
Inverter circuit, Interface circuit, Driver circuit
Packaging specifications
R
1
10k
R
2
10k
Parameter Tr1 and Tr2
V
CC
50V
I
C(MAX.)
100mA
Part No. Package
Package
size
(mm)
Taping
code
8,000 H118
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMH11 EMT6 1616 T2R 180
3,000 H11
IMH11A 3,000 H11
UMH11N UMT6 2021 TN 180 8
SMT6 2928 T110 180 8
EMT6 UMT6
SMT6
EMH11
(SC-107C)
IMH11A
SOT-457 (SC-74)
UMH11N
SOT-363 (SC-88)
OUT
(6)
(2)
IN
(1)
GND
(3)
OUT
IN
(5)
GND
(4)
OUT
(4)
(2)
IN
(3)
GND
(1)
OUT
IN
(5)
GND
(6)
EMH11 / UMH11N
IMH11A
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/7
2014.09 - Rev.C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH11 / UMH11N / IMH11A
Absolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter Symbol Values Unit
V
CC
50 V
V
IN
10 to 40
V
I
O
50 mA
I
C(MAX.)
*1
100 mA
EMH11 / UMH11N
P
D
*2
150 (Total)
*3
mW
IMH11A
300 (Total)
*4
mW
T
j
150 °C
T
stg
55 to 150
°C
Parameter Symbol Conditions UnitMin. Typ. Max.
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100A
--
V
V
I(on)
V
O
= 0.3V, I
O
= 10mA
3.0 - -
0.5
V
Input current
I
I
V
I
= 5V
- - 0.88 mA
Output voltage
V
O(on)
I
O
/ I
I
= 10mA / 0.5mA
- 0.1 0.3
A
DC current gain
G
I
V
O
= 5V, I
O
= 5mA
30---
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V
- - 0.5
k
Resistance ratio
R
2
/R
1
-
0.8 1 1.2 -
Input resistance
R
1
-
71013
MHzTransition frequency
f
T
*1
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
- 250 -
2/7
2014.09 - Rev.C