Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1 Publication Order Number:
MMBD352WT1/D
MMBD352WT1G,
NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ 0 V
Low Forward Voltage − 0.5 V (Typ) @ I
F
= 10 mA
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
7.0 V
CC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25C
Derate above 25C
P
D
200
1.6
mW
mW/C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
625 C/W
Total Device Dissipation Alumina
Substrate (Note 2)
T
A
= 25C
Derate above 25C
P
D
300
2.4
mW
mW/C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417
C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOT−323 (SC−70)
CASE 419
STYLE 9
1
ANODE
3
CATHODE/ANODE
2
CATHODE
Device Package Shipping
†
ORDERING INFORMATION
MMBD352WT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M5 MG
G
M5 = Specific Device Code
M = Date Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
NSVMMBD352WT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
MMBD352WT1G, NSVMMBD352WT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Forward Voltage
(I
F
= 10 mAdc)
V
F
− 0.60
V
Reverse Voltage Leakage Current
(V
R
= 3.0 V)
(V
R
= 7.0 V)
I
R
−
−
0.25
10
mA
Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
− 1.0
pF
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 2. Capacitance
I
0.7 0.80.3 0.4 0.5 0.6
, FORWARD CURRENT (mA)
F
T
A
= 85C
T
A
= -40C
T
A
= 25C
V
R
, REVERSE VOLTAGE (VOLTS)
0
1.0
0.9
0.8
0.6
0.7
1.0 2.0 3.0 4.0
C, CAPACITANCE (pF)