WSB5557Z
Will Semiconductor Ltd. 1
2015
/3/4
-
Rev.
1.
0
WSB5557Z
Schottky Barrier Diode
Features
100mA Average rectified forward current
Low forward voltage
Ultra
-
low leakage current
Small package DFN0603-2L
Applications
Low Current rectification
Absolute maximum ratings
Electronics characteristics
(T
A
=25
o
C)
Order Information
Note 1：*= Month Code(A~Z); H= Device code;
Http://www.sh-willsemi.com
DFN0603-2L(Bottom View)
Circuit
Marking
Parameter Symbol Value Unit
Reverse voltage (repetitive peak) V
RM
30 V
Reverse voltage (DC) V
R
30 V
Average rectified forward current I
O
100 mA
Peak forward surge current (8.3ms single sine pluse) I
FSM
2
A
Junction temperature T
J
150
O
C
Operating temperature Topr -40 ~ 150
O
C
Storage temperature Tstg -40 ~ 150
O
C
Parameter Symbol Condition Min. Typ. Max. Unit
Reverse Voltage V
R
I
R
=100uA 30 V
Forward Voltage
V
F
I
F
=1mA
0.36
V
I
F
=10mA 0.46 V
Reverse current I
R
V
R
=10V 0.3 uA
V
R
=30V 0.5 uA
Junction capacitance C
J
V
R
=5V, F=1MHz 13 pF
Thermal Resistance R
θ(JA)
Junction to Ambient 650 K/W
Device Package Marking Shipping
WSB5557Z-2/TR DFN0603-2L *H
(1)
10000/Reel&Tape
WSB5557Z
Will Semiconductor Ltd. 2
Typical characteristics (Ta=25
o
C, unless otherwise noted)
Fig.1 Forward voltage vs. Forward current Fig.2 Reverse current vs. Reverse voltage
Fig.3 Junction capacitance vs. Reverse voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1E-4
1E-3
0.01
0.1
1
Forward Current (A)
Forward Voltage (V)
-40
o
C
0
o
C
25
o
C
65
o
C
85
o
C
125
o
C
150
o
C
0 5 10 15 20 25
5
10
15
20
25
30
35
40
Junction Capacitance-C
j
(pF)
Reverse Voltage (V)
T=25
o
C
f=1MHz
5 10 15 20 25 30
1E-4
1E-3
0.01
0.1
1
10
100
1000
Reverse Current (uA)
Reverse Voltage (V)
-40
o
C
0
o
C
25
o
C
65
o
C
85
o
C
125
o
C
150
o
C
2015
/3/4
-
Rev.
1.
0