1N5711
Silicon Rectifier Diode
Schottky, RF Switch
DO−35 Type Package
Description:
The 1N5711 is a metal to silicon junction diode featuring high breakdown, low turn−on voltage and
ultrafast switching. This device is primarily intended for high level UHF/VHF detection and pulse
application with broad dynamic range.
Absolute Maximum Ratings:
(T
A
= +25C, Limiting Values)
Repetitive Peak Reverse Voltage, V
RRM
70V...............................................
Forward Continuous Current (Figure 1), I
F
15mA...........................................
Surge Non−Repetitive Forward Current (t
p
1s, Figure 1), I
FSM
50mA........................
Operating Junction Temperature Range, T
J
−65 to +200C..................................
Storage Temperature Range, T
stg
−65 to +200C..........................................
Thermal Resistance, Junction−to−Ambient (Figure 1), R
thJA
400C/W........................
Figure 1
dd
Infinite heat sinks
* d = 4mm
Electrical Characteristics: (T
A
= +25C unless otherwise specified)
Parameter
Symbol Test Conditions Min Typ Max Units
Static Characteristics
Breakdown Voltage V
(BR)
I
R
= 10A 70 − − V
Continuous Forward Voltage V
F
(1) I
F
= 1mA − − 0.41 V
I
F
= 15mA − − 1 V
Continuous Reverse Current I
R
(1) V
R
= 50V − − 0.2 A
Dynamic Characteristics
Small Signal Capacitance C V
R
= 0, f = 1MH
Z
− − 2 pF
Minority Carrier Life Time I
F
= 5mA, Krakauer Method − − 100 ps
Note 1. Pulse Test t
p
300s 2%
Color Band Denotes Cathode
1.000
(25.4)
Min
.200
(5.08)
Max
.090 (2.28)
Dia Max
.022 (.509) Dia Max