TVS Diode Arrays (SPA
®
Diodes)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/23/18
5
SM Series
General Purpose ESD Protection - SM05 through SM36
Description
Applications
The SM series TVS Diode Array is designed to protect
sensitive equipment from damage due to electrostatic
discharge (ESD), electrical fast transients (EFT), and
lightning induced surges.
The SM series can absorb repetitive ESD strikes above the
maximum level specified in the IEC 61000-4-2 international
standard without performance degradation and safely
dissipate up to 24A of 8/20µs induced surge current (IEC-
61000-4-5, 2nd Edition) with very low clamping voltages.
Features
• RoHS compliant and
lead-free
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 50A
(5/50ns)
• Lightning, IEC 61000-
4-5, 2nd Edition, 24A
(t
P
=8/20μs, SM05)
• Working voltages: 5V,
12V, 15V, 24V and 36V
• Low clamping voltage
• Low leakage current
• AEC-Q101 qualified
(SOT23-3 package)
• Moisture Sensitivity Level
(MSL-1)
• Industrial Equipment
• Test and Medical
Equipment
• Point-of-Sale Terminals
• Motor Controls
• Legacy Ports
(RS-232, RS-485)
• Security and Alarm
System
• Automotive Electronics
Pinout and Functional Block Diagram
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
RoHS
Pb
GREEN
SM Series 400W TVS Diode Array
1
2
3
RS-232 Application Example
IC
RD
TD
RTS
CTS
DSR
DTR
RS-232 Port
Transceiver
SM15 (x6)
(bidireconal implementaon)
Case GND
(AEC-Q101 qualified)
Additional Information
Datasheet
Samples
Resources
TVS Diode Arrays (SPA
®
Diodes)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/23/18
6
General Purpose ESD Protection - SM05 through SM36
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
P
Pk
Peak Pulse Power (t
p
=8/20μs)
400
W
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
SM05 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 5.0 V
Reverse Voltage Drop V
R
I
R
=1mA 6.0 V
Leakage Current I
LEAK
V
R
=5V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 13.0 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.19 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 24.0 A
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 400 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 350 pF
SM12 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 12.0 V
Reverse Voltage Drop V
R
I
R
=1mA 13.3 V
Leakage Current I
LEAK
V
R
=12V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.25 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 1 7. 0 A
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 150 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 120 pF