January 2018
DocID029599 Rev 3
1/11
This is information on a product in full production.
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HSP053-4M5
4-line ESD protection for high speed lines
Datasheet - production data
Features
Very compact 500 µm pitch package, for
easy PCB layout
Ultra-large bandwidth: 18 GHz
Ultra-low capacitance: 0.15 pF (I/O to I/O)
and 0.25 pF (I/O to GND)
Low leakage current: < 1 nA
Extended operating junction temperature
range: -40 °C to 150 °C
Thin package: 0.4 mm max.
RoHS compliant
Benefits
High ESD protection level
High integration
Suitable for high density boards
Complies with the following standards
MIL-STD 883G method 3015-7 class 3B > 8
kV
Exceeds IEC61000-4-2 level 4
±10 kV (contact discharge)
±25 kV (air discharge)
Applications
The HSP053-4M5 is designed to protect against
to electro-static discharge sub-micron technology
circuits driving:
HDMI 1.4 and HDMI 2.0
USB 3.1 Gen 1 and Gen 2
Digital video interface
Display port
Serial ATA
The ultra-low variation of the capacitance
ensures very low influence on signal-skew. The
large bandwidth makes it compatible with HDMI
2.0 (= 5.94 Gbps) and USB 3.1 Gen 2
(= 10 Gbps).
Description
The HSP053-4M5 is a 4 channel ESD array with
a rail to rail architecture designed specifically for
the protection of high speed differential lines.
The device is packaged in
μQFN 1.3 mm x 0.8 mm with a 500 μm pitch.
Figure 1: Functional diagram
1
5
2
4
3
I/O 2
I/O 3
I/O 4
GND
I/O 1
Characteristics
HSP053-4M5
2/11
DocID029599 Rev 3
1 Characteristics
Table 1: Absolute maximum ratings (T
amb
= 25 °C)
Symbol
Parameter
Value
Unit
V
PP
Peak pulse voltage
Contact discharge
Air discharge
10
25
kV
T
stg
Storage temperature range
-65 to +150
°C
T
j
Operating junction temperature range
-40 to +150
T
L
Maximum lead temperature for soldering during 10 s
260
Table 2: Electrical characteristics (T
amb
= 25 °C)
Symbol
Test condition
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
5.3
5.8
V
V
RM
5.0
I
RM
V
RM
= 3.6 V
< 1
50
nA
V
RM
= 5.0 V
3
70
nA
V
CL
IEC 61000-4-2, +8 kV contact measured at 30 ns
16
V
R
d
Dynamic resistance, Pulse duration
100ns
I/O to GND
0.68
Ω
GND to I/O
0.65
C
I/O - I/O
V
I/O
= 0 V, V
OSC
= 30 mV
F = 2.5 GHz to
9 GHz
0.15
0.2
pF
C
I/O -
GND
F = 200 MHz to
2.5 GHz
0.35
0.5
F = 2.5 GHz to
9 GHz
0.25
0.4
f
C
- 3dB
18
GHz