Surface Mount NPN General

Purpose Transistor

2N2222AUB (TX, TXV)

Issue B 08/2016 Page 1

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Description:

The2N2222AUB(TX,TXV)isaminiaturehermecallysealedceramicsurfacemountgeneralpurposeswitchingtransistor.

Theminiaturethreepinceramicpackageisidealforupgradingcommercialgradecircuitstomilitaryreliabilitylevelswhere

plascSOT‐23deviceshavebeenused.The“UB”suﬃxdenotesthe3terminalchipcarr

ierpackage.

Typical��scr

eeningperMIL‐PRF‐19500/255.Theburn‐incondionisV

=30V.P

=200mW,T

=25°C,t=80hrs.Referto

MIL‐PRF‐19500/255forcompleterequirements.Inaddion,theTXandTXVversionsreceive100%thermalresponse

tesng.

Whenorderingpartswithoutprocessing,donotusetheTXorTXVsuﬃx.

Applications:

 General switching

 Am

pliﬁcation



Signal processing

 Radio transmission

 Logic gates

Features:

 Ceramic 3 pin surface mount package (UBN)



Miniature package to minimize circuit board area



Hermetically sealed



Processed per MIL-PRF-19500/255



Same footprint and pin-out as many SOT-23 package

transistors

Pin Funcon

1 Base

3 Collector

2 Emier

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Surface Mount NPN General

Purpose Transistor

2N2222AUB (TX, TXV)

Issue B 08/2016 Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (T

= 25° C unless otherwise noted)

Collector‐Base Voltage 75V

Collector‐EmierVoltage 50V

Emier‐BaseVoltage 6.0V

CollectorCurrent‐Connuous 800mA

OperangJunconTemperature(T

)‐65°Cto+200°C

StorageJunconTemperature(T

stg

)‐65°Cto+200°C

PowerDissipaon@T

=25°C 0.3W

PowerDissipaon@Tc=25°C 1.00W

(1)



SolderingTemperature(vaporphasereﬂowfor30seconds) 215°C

SolderingTemperature(heatedcolletfor5seconds) 260°C

Electrical Speciﬁcations

Electrical Characteristics

= 25° C unless otherwise noted)

SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS

OFFCHARACTERISTICS

(BR)CBO

Collector‐BaseBreakdownVoltage 75 V I

=10µA,I

=0

(BR)CEO

 Collector‐Emier��BreakdownVoltage 50 V I

=10mA,I

=0

(BR)EBO

 Emier‐BaseBreakdownVoltage 6.0 V I

=10µA,I

=0

CBO

 Collector‐BaseCutoﬀCurrent

 10 nA V

=60V,I

=0

 10 µA V

=60V,I

=0,T

=150°C

EBO

 Emier‐BaseCutoﬀCurrent10 nA V

=4V,I

=0

CES

 CollectorEmierCutoﬀCurrent50 nA V

=50V

ONCHARACTERISTICS

FE



50 ‐V

=10V,I

=0.1mA

75 325‐V

=10V,I

=1.0mA

100 ‐V

=10V,I

=10mA

100 300‐V

=10V,I

=150mA

(2)



30 ‐V

=10V,I

=500mA

(2)



35 ‐V

=10V,I

=10mA,T

=‐55°C

Forward‐CurrentTransferRao

Note:

1.Deratelinearly6.6mW/°Cabove25°C

2.PulseWidth≤300µs,DutyCycle≤2.0%