Technical Data
Data Sheet N1967 REV. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SMP1005-01WTG
SMP1005-01WTG TVS Arrays
Description
Features
Applications
Pinout
Functional Block Diagram
Application Example
The SMP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international
standard (Level 4, ± 8kV contact discharge) without performance degradation. The back-to-back configuration
provides symmetrical ESD protection for data lines when AC signals are present.
ESD protection in accordance with:
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-5 (lightning) 10A (8/20μs)
IEC 61000-4-4 (EFT) 40A (5/50ns)
Low capacitance of 30 pF @ VR=0V
Low leakage current of 0.1μA at 5V
Industries smallest ESD footprint available(0201)
Mobile Phones
Smart Phones
Camcorders
PDA
Digital cameras
MP3/PMP
Portable navigation devices
Portable Medical
Point of sale terminals
Technical Data
Data Sheet N1967 REV. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SMP1005-01WTG
Package
Marking
Min. Order Qty.
0201 Flipship
●
10000
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only
rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
Note: 1. Parameter is guaranteed by design and/or device characterization.
Ordering Information
Absolute Maximum Ratings @T
A
=25°C unless otherwise specified
Parameter
Symbol
Value
Units
Peak Pulse Current (tp=8/20μs)
I
PP
10.0
A
Operating Temperature
T
OP
-40 to + 125
°C
Storage Temperature
T
STOR
-60 to + 150
°C
Thermal Information
Parameter
Value
Units
Storage Temperature Range
-55 to + 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature
(Soldering 20-40s)
260
°C
Electrical Characteristics (T
OP
=25°C)
Characteristics
Symbol
Condition
Min.
Typ.
Max.
Units
Reverse Stand-Off Voltage
V
RWM
-
-
-
6.0
V
Breakdown Voltage
V
BR
I
R
= 1mA
-
8.5
9.5
V
Reverse Leakage Current
I
LEAK
V
R
=5V with 1pin at GND
-
0.1
0.5
μA
Clamping Voltage
1
V
C
I
PP
= 1A, tp=8/20μs, Fwd
-
9.3
-
V
I
PP
= 2A, tp=8/20μs, Fwd
-
10.0
-
V
I
PP
= 10A, tp=8/20μs, Fwd
-
15.6
ESD With stand Voltage
1
V
ESD
IEC61000-4-2
(Contact Discharge)
±30
-
-
kV
IEC61000-4-2
(Air Discharge)
±30
-
-
kV
Dynamic Resistance
R
DYN
(V
C2
-V
C1
)/(I
PP2
-I
PP1
)
-
0.28
-
Ω
Junction Capacitance
1
C
D
Reverse Bias=0V
-
30
-
pF
Reverse Bias=2.5V
-
23
-