CHA8611-99F
Ref. DSCHA86118185 - 05 Jul 18
1/26
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
18W X-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8611-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 18W of
saturated output power and 43% of power
added efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Frequency range: 8.5-11GHz
■ High output power: 18W
■ High PAE: 43%
■ Linear Gain: 24dB
■ DC bias: Vd=25Volt @ Idq=0.8A
■ Chip size 4.36x2.57x0.1mm
■ Available in bare die
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
24
dB
Pout
Output Power
18
W
PAE
Associated Power Added Efficiency
43
%
In Out
V+
V-
STG1 STG2
CHA8611-99F
18W X-Band High Power Amplifier
Ref. : DSCHA86118185 - 05 Jul 18
2/26
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Electrical Characteristics (Pulsed mode)
Tamb.= +25°C, Vd = +25V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
24
dB
Pout
Output Power (Pin=27dBm)
18
W
PAE
Associated Power Added Efficiency
(Pin=27dBm)
43
%
Id
Associated current (Pin=27dBm)
1.6
A
IRL
Input Return Loss
10
dB
ORL
Output Return Loss
15
dB
Idq
Quiescent Current
0.8
A
Vd
Drain Voltage
25
V
Vg
Gate Voltage
-3.25
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Electrical Characteristics (CW mode)
Tamb.= +25°C, Vd = +25V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
23
dB
Pout
Output Power (Pin=28dBm)
17
W
PAE
Associated Power Added Efficiency
(Pin=28dBm)
43
%
Id
Associated current (Pin=28dBm)
1.5
A
IRL
Input Return Loss
10
dB
ORL
Output Return Loss
15
dB
Idq
Quiescent Current
0.8
A
Vd
Drain Voltage
25
V
Vg
Gate Voltage
-3.25
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.