CH731UGP
Dimensions in millimeters
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 40 Volts CURRENT 0.03 Ampere
ELECTRICAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
2002-5
Maximum Average Reverse Current at VR=
10V
CHARACTERISTICS SYMBOL UNITS
0.37
1.0
uAmps
VoltsMaximum Instantaneous Forward Voltage at IF= 1mA
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Storage Temperature Range
Maximum Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
CJ
TJ
VF
IR
TSTG
IFSM
CH731UGP UNITS
40
Volts
Volts
Volts
Amps
28
40
0.03
0.2
2.0
+125
-40 to +125
Amps
pF
o
C
o
C
1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts.
2. ESD sensitive product handling required.
APPLICATION
* High speed switching
FEATURE
* Small surface mounting type. (SC-74/SOT-457)
* Low VF and low IR
* Three diodes in parallel installation
CONSTRUCTION
CIRCUIT
* Silicon epitaxial planar
SC-74/SOT-457
SC-74/SOT-457
0.8±0.1
1.1±
0.15±
0~0.1
2.8±0.2
0.3~0.6
0.1
0.06
0.2
0.1
0.95
0.95
1.9±0.2 2.9±0.2
0.3±
1.6±
0.1
0.05
0.1
0.2
MARKING
* D3P
(1) (6)
(4)(3)
(4)(6)
(3)(1)
CH731UGP
RATING CHARACTERISTIC CURVES ( CH731UGP )
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1m
10m
100m
pulse measurement
1u
10u
100u
1000m
Typ.
1n
10n
100n
1u
10u
100u
1
2
5
10
20
50
100
0
0
20
40
60
80
100
25 50 75 100 125
FORWARD CURRENT, (A)
FORWARD VOLTAGE, (V)
FIG. 1 - FORWARD CHARACTERISITICS
T
a
=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE CURRENT, (A)
REVERSE VOLTAGE, (V)
FIG. 2 - REVERSE CHARACTERISTICS
0 5 10 15 20 25 30 35
T
a
=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE VOLTAGE, (V)
JUNCTION CAPACITANCE, (pF)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
0 2 4 6 8 10 12 14
AVERAGE FORWARD CURRENT, (%)
AMBIENT TEMPERATURE, (
o
C
)
FIG. 4 - TYPICAL FORWARD CURRENT
DERATING CURVE