CH661DGP
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 60 Volts CURRENT 0.5 Ampere
ELECTRICAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
2005-5
Maximum Average Reverse Current at VR(2)=
10V
CHARACTERISTICS SYMBOL UNITS
30
uAmps
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Storage Temperature Range
Maximum Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
CJ
TJ
0.63
VoltsMaximum Instantaneous Forward Voltage at IF= 0.5A VF
IR(2)
Maximum Average Reverse Current at VR(1)=
45V 40
uAmpsIR(1)
TSTG
IFSM
CH661DGP
UNITS
60
Volts
Volts
Volts
Amps
42
50
0.5
3.0
20
+125
-40 to +125
Amps
pF
o
C
o
C
1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts.
2. ESD sensitive product handling required.
CIRCUIT
APPLICATION
* High frequency rectification for switching power supply
FEATURE
* Low IR. (IR=20uA Typ.)
* High reliability
CONSTRUCTION
* Silicon epitaxial planar
(1)
(2)
(3)
SOT-23
* Small surface mounting type. (SOT-23)
MARKING
* LV1
Dimensions in millimeters
SOT-23
.119
(
3.04
)
.007
(
0.177)
.002
(
0.05
)
.110
(
2.80
)
.103
(
2.64
)
.028
(
0.70
)
.020
(
0.50
)
.055
(
1.40
)
.047
(
1.20
)
.045
(
1.15
)
.033
(
0.85
)
.086 (2.20)
.082
(
2.10
)
.041
(
1.05
)
.019
(
0.50)
.018
(
0.30
)
.033
(
0.85
)
.066
(
1.70
)
(1)
(2)
(3)
CH661DGP
RATING CHARACTERISTIC CURVES ( CH661DGP )
1u
10u
100u
1m
10m
100m
1
0 0.1 0.2 0.3 0.4 0.5 0.70.6
Typ.
pulse measurement
Typ.
pulse measurement
10m
1m
100u
10u
1u
0.1u
0 5 10 15 20 25 30 35
1
10
100
1000
0
25 125
0.5
POWER DISSIPATION, (W)
FORWARD CURRENT, (A)
FORWARD VOLTAGE, (V)
FIG. 1 - FORWARD CHARACTERISTICS
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE CURRENT, (A)
REVERSE VOLTAGE, (V)
FIG. 2 - REVERSE CHARACTERISTICS
Ta=125
o
C
75
o
C
25
o
C
REVERSE VOLTAGE, (V)
0 5 10 15 20 25
JUNCTION CAPACITANCE , (pF)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
AMBIENT TEMPERATURE, (
o
C
)
FIG. 4 - FORWARD POWER DISSIPATION
CHARACTERISTICS