CH551N1GP
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 30 Volts CURRENT 0.5 Ampere
ELECTRICAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
2006-07
Maximum Average Reverse Current at VR= 20V
CHARACTERISTICS SYMBOL UNITS
0.47
100
uAmps
VoltsMaximum Instantaneous Forward Voltage at IF(2)= 500mA
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Storage Temperature Range
Maximum Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
CJ
TJ
VF(2)
0.36
VoltsMaximum Instantaneous Forward Voltage at IF(1)= 100mA VF(1)
IR
TSTG
IFSM
CH551N1GP
CH551N1GP
UNITS
30
Volts
Volts
Volts
Amps
21
20
0.5
2.0
15
+125
-40 to +125
Amps
pF
o
C
o
C
1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts.
2. ESD sensitive product handling required.
APPLICATION
FEATURE
* Small surface mounting type. (FBPT-923)
* Ultra low VF. (VF=0.41V Typ. at 0.5A)
* High reliability
CONSTRUCTION
* Silicon epitaxial planar
* Ultra high-speed switching
* Voltage clamping
* Protection circuit
* Low current rectification
* Low power consumption applications
(2)
(1)
(3)
1.0±0.05
0.5±0.05
0.05±0.04
0.68±0.05
0.26±0.05
0.42±0.05
0.3±0.05
0.25(REF.)
0.37(REF.)
CIRCUIT
Dimensions in millimeters
1.0±0.05
FBPT-923
FBPT-923
RATING CHARACTERISTIC CURVES ( CH551N1GP )
0.0
100u
1A
1m
10m
100m
0.1 0.2 0.3 0.4 0.5
10A
0
100n
1u
10u
100u
1m
10m
100m
40
10 20 30
0
10
1
100
10
20
30
40
1000
FORWARD CURRENT, (A)
FORWARD VOLTAGE, (V)
FIG. 1 - FORWARD CHARACTERISTICS
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE CURRENT, (A)
REVERSE VOLTAGE, (V)
FIG. 2 - REVERSE CHARACTERISTICS
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE VOLTAGE, (V)
JUCTION CAPACITANCE (pF)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE