CH491DGP
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 25 Volts CURRENT 1 Ampere
ELECTRICAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
2002-5
Maximum Average Reverse Current at VR=
20V
CHARACTERISTICS SYMBOL UNITS
0.45
200
uAmps
VoltsMaximum Instantaneous Forward Voltage at IF= 1A
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Storage Temperature Range
Maximum Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
CJ
TJ
VF
IR
TSTG
IFSM
CH491DGP UNITS
25
Volts
Volts
Volts
Amps
18
20
1.0
3.0
30
+125
-40 to +125
Amps
pF
o
C
o
C
1. Measured at 1.0 MHZ and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
APPLICATION
FEATURE
* Small surface mounting dual element linear type.
(SOT-23)
* Ultra low VF. (Vf=0.40V typ. at 1A)
* IF=1.0A guaranteed despite size
CONSTRUCTION
CIRCUIT
* Silicon epitaxial planar
* 10T
* Low power recification for switching power supply
MARKING
(3)
(1)(2)
CH491DGP
SOT-23
Dimensions in millimeters
SOT-23
.119
(
3.04
)
.007
(
0.177)
.002
(
0.05
)
.110
(
2.80
)
.103
(
2.64
)
.028
(
0.70
)
.020
(
0.50
)
.055
(
1.40
)
.047
(
1.20
)
.045
(
1.15
)
.033
(
0.85
)
.086 (2.20)
.082
(
2.10
)
.041
(
1.05
)
.019
(
0.50)
.018
(
0.30
)
.033
(
0.85
)
.066
(
1.70
)
(1)
(2)
(3)
RATING CHARACTERISTIC CURVES ( CH491DGP )
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.2
0.1
0.3
0.4
0.5
0.7
0.6
D=0.05
D=0.1
D=0.2
D=0.3
D=0.8
DC
sine
D=0.5
Tp
T
D=Tp/T
Tj=Tj Max.
IF
IO
1.5
1.0
0.5
0
D=0.3
D=0.2
D=0.1
D=0.05
DC
D=0.5
D=0.8
sine
Tp
T
IF
IO
0 0.2 0.3 0.4 0.5 0.60.1
0.1m
1m
100m
10m
10
1
FORWARD CURRENT, (A)
FORWARD VOLTAGE, (V)
FIG. 1 - FORWARD CHARACTERISTICS
Ta=
125
o
C
75
o
C
25
o
C
-25
o
C
0.1u
10
1
100u
10u
1u
1000
100
REVERSE CURRENT, (mA)
REVERSE VOLTAGE, (V)
FIG. 2 - REVERSE CHARACTERISTICS
Ta=125
o
C
75
o
C
25
o
C
0 10 20 30 40 50 60 70
-25
o
C
1
10
1000
100
10000
f=1MHz
REVERSE VOLTAGE, (V)
JUNCTION CAPACITANCE , (pF)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
0 5 10 15 20 25 30 35 40
AVERAGE FORWARD CURRENT, (A)
FORWARD POWER DISSIPATION, (W)
FIG. 5 - DERATING CURVE BY AMBIENT
AMBIENT TEMPERATURE, (
o
C
)
AVERAGE FORWARD CURRENT, (A)
0 25
50 75 100 125
D=Tp/T
VR=VRM/2
FIG. 4 - FORWARD POWER DISSIPATION
CHARACTERISTICS