CH483KGP
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 30 Volts CURRENT 0.2 Ampere
ELECTRICAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
2005-11
Maximum Average Reverse Current at VR=
10V
CHARACTERISTICS SYMBOL UNITS
30
uAmps
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Storage Temperature Range
Maximum Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
CJ
TJ
0.33
VoltsMaximum Instantaneous Forward Voltage at IF(1)= 10mA VF(1)
0.50
VoltsMaximum Instantaneous Forward Voltage at IF(2)= 200mA VF(2)
IR
TSTG
IFSM
CH483KGP UNITS
30
Volts
Volts
Volts
Amps
21
30
0.2
1.0
6.0
+125
-40 to +125
Amps
pF
o
C
o
C
1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts.
2. ESD sensitive product handling required.
CIRCUIT
APPLICATION
* Low power rectification
FEATURE
* Small surface mounting type. (SC-82/SOT-343)
* Extremely low forward voltage.
* This is a composite component and is ideal for reducing
the number of components used.
* High reliability
CONSTRUCTION
* Silicon epitaxial planar
SC-82/SOT-343
Dimensions in millimeters
SC-82/SOT-343
0.1Min.
0.7
0.9±0.1
0.15±0.05
1.25±0.1
2.1±0.1
2.0±0.2
0.65
1.25±0.1
0.65
1.3±0.1
0.2±0.1 0.2±0.1
0.3±0.1
0~0.1
0.2±0.1
(1)
(2) (3)
(4)
)2*
)3*
)5*
)4*
MARKING
* 3W
CH483KGP
RATING CHARACTERISTIC CURVES ( CH483KGP )
1u
10u
100u
1m
10m
100m
1
0 0.1 0.2 0.3 0.4 0.5 0.6
10n
100n
1u
10u
100u
1m
10m
0 5 10 15 20 30 3525
1
10
100
FORWARD CURRENT, (A)
FORWARD VOLTAGE, (V)
FIG. 1 FORWARD CHARACTERISTICS
Ta=
125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE CURRENT, (A)
REVERSE VOLTAGE, (V)
FIG. 2 - REVERSE CHARACTERISTICS
0 10 20 30
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
REVERSE VOLTAGE, (V)
JUNCTION CAPACITANCE, (pF)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE