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MVR2N2222AUA

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Rad Hard NPN Silicon Switching Transistor

Screened per MIL-PRF-19500 & ESCC 22900

Screened Levels:

MVR

QPL RANGE and RAD LE VEL

Radiation Level MVR2N2222AUA

UA Package

Also available in:

TO-206AA (TO-18)

package

(leaded top-hat)

MVR2N2221A(L)

UB package

(surface mount)

MVR2N2221AUB

TID

100 Krad

ELDRS

100 Krad

DESCRIPTION

This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to

drive many high-reliability applications. This device is constructed and screened to a JANTXV

performance level with radiation test method 1019 wafer lot acceptance conducted on all die

lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness

assurance requirements for space flight projects.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

 JEDEC registered 2N2222

 TID level screened per MIL-PRF-19500

 Also available with ELDRS testing to 0.01 Rad(s)/ sec

 PIND testing option available

 MKCR/MHCR chip die available

 RHA (Radiation Hardness Assured) lot by lot validation testing

APPLICATIONS / BENEFITS

 Rad-Hard power supplies

 Rad-Hard motor controls

 General purpose switching

 Instrumentation Amps

 EPS Satellite switching power applications

MAXIMUM RATINGS

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters/Test Conditions Symbol Value Unit

Junction and Storage Temperature T

and T

STG

-65 to +200 ºC

Thermal Resistance Junction-to-Solder Pad (Ambient)

(see Figure 4)

ӨJSP(AM)

40 ºC/W

Thermal Resistance Junction-to-Solder Pad (Infinite Sink)

(

see Figure 3)

ӨJSP(IS)

110 ºC/W

Thermal Resistance Junction-to-Ambient (see Figure 3)

(1)

ӨJA

325 ºC/W

Total Power Dissipation:

(see Figures 1 and 2)

@ T

= +25 ºC

@ T

SP(IS)

= +25 ºC

@ T

SP(AM)

= +25 ºC

0.5

1.0

1.5

Collector-Base Voltage, Emitter Open V

CBO

75 V

Emitter-Base Voltage, Collector Open V

EBO

6 V

Collector-Emitter Voltage, Base Open V

CEO

50 V

Collector Current, dc I

800 mA

Solder Temperature @ 10 s T

260

Notes: 1. For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute MIL-

PRF-19500/255 figures 8 and 13 and use R

θJA

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MVR2N2222AUA

MECHANICAL and PACKAGING

 CASE: Hermetically sealed ceramic package

 TERMINALS: Gold plate over nickel

 MARKING: Manufacturer's ID, date code, part number

 POLARITY: NPN (see package outline)

 TAPE & REEL option: Per EIA-481 (consult factory for quantities)

 WEIGHT: Approximately 0.12 grams

 See Package Dimensions on last page.

PART NOMENCLATU RE

MVR 2N2222A UA P PIND

Reliability Level

MVR* – 100K Rads (Si)

Surface Mount package

JEDEC type number

*The MVR designator is our internal part nomenclature assigned to this family of parts, in lieu of pending JANTXVR

submissions through DLA (Defense Logistic Agency).

SYMBOLS & DEFINITIONS

Symbol Definition

Base current: The value of the dc current into the base terminal.

Collector current: The value of the dc current into the collector terminal.

Emitter current: The value of the dc current into the emitter terminal.

Gate drive impedance or Gate resistance

Collector-base voltage: The dc voltage between the collector and the base.

CBO

Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is

open-circuited.

Collector-emitter voltage: The dc voltage between the collector and the emitter.

CEO

Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base

terminal is open-circuited.

Emitter-base voltage: The dc voltage between the emitter and the base

EBO

Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal

open-circuited.