Elektronische Bauelemente
MMDT3904V
0.2A, 60V
Dual ī€ŸPī€Ÿ Plastic-Encapsulated Transistors
10-May-2017 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
FEATURES
ī€
Epitaxial Planar Die Construction
ī€
Ideal for Low Power amplification and Switching
MARKING
KAP
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-563 3K 7 inch
MAXIMUM RATINGS
(T
A
=25Ā°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5 V
Collector Currentā€“Continuous I
C
0.2 A
Collector Power Dissipation P
C
0.2 W
Junction & Storage temperature T
J
, T
STG
150, -55~150 Ā°C
ELECTRICAL CHARACTERISTICS
(T
A
=25Ā°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=10ĀµA, I
E
=0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40 - - V I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=10ĀµA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.05 uA V
CB
=30V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.05 uA V
EB
=5V, I
C
=0
Collector Cut-Off Current I
CEX
- - 0.05 uA V
CE
=30V, V
BE(off)
=3V
h
FE(1)
40 - - V
CE
=1V, I
C
=0.1mA
h
FE(2)
70 - - V
CE
=1V, I
C
=1mA
h
FE(3)
100 - 300 V
CE
=1V, I
C
=10mA
h
FE(4)
60 - - V
CE
=1V, I
C
=50mA
DC Current Gain
h
FE(5)
30 - -
V
CE
=1V, I
C
=100mA
V
CE(sat)1
- - 0.2 V I
C
=10mA, I
B
=1mA
Collector-Emitter Saturation Voltage
V
CE(sat)2
- - 0.3 V I
C
=50mA, I
B
=5mA
V
BE(sat)1
0.65 - 0.85 V I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
V
BE(sat)2
- - 0.95 V I
C
=50mA, I
B
=5mA
Transition Frequency f
T
300 - - MHz V
CE
=20V, I
C
=10mA, f=100MHz
Collector Output Capacitance C
ob
- 4 - pF V
CB
=5V, I
E
=0, f=1MHz
Delay Time t
d
- 35 -
Rise Time t
r
- 35 -
V
CC
=3V, V
BE
(
off
)= -0.5V, I
C
=10mA,
I
B
1= -I
B
2=1mA
Storage Time t
s
- 200 -
Fall Time t
f
- 50 -
nS
V
CC
=3V, I
C
=10mA ,I
B
1= -I
B
2=1mA
SOT-563
E
F
J
B
C
D G
A
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.50
1.70
F
0.09
0.16
B
1.50
1.70
G
0.45
0.55
C
0.525
0.60
H
0.17
0.27
D 1.10 1.30 J 0.10 0.30
E - 0.05
Elektronische Bauelemente
MMDT3904V
0.2A, 60V
Dual ī€ŸPī€Ÿ Plastic-Encapsulated Transistors
10-May-2017 Rev. A Page 2 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
TYPICAL CHARACTERISTICS