Elektronische Bauelemente
MMDT3904
0.2A, 60V
NPN General Purpose Transistor
22-Nov-2013 Rev.D Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation P
CM
: 200mW (Ta=25°C)
Collector Current I
CM
: 200mA
Collector – Base Voltage V
(BR)CBO
: 60V
MARKING
PACKAGING DIMENSION
Package MPQ Leader Size
SOT-363 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (T
a
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage V
CBO
60 V
Collector - Emitter Voltage V
CEO
40 V
Emitter - Base Voltage V
EBO
5 V
Collector Current I
CM
0.2
A
Power Dissipation P
CM
200 mW
Junction, Storage Temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
a
= 25°C unless otherwise specified)
Paramete
r
S
y
mbol Min. T
yp
. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=10μA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 - - V I
C
=1mA, I
B
=0
Emitter - Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=10μA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.05 μA V
CB
=30V, I
E
=0
Collector Cut-Off Current I
CEO
- - 0.05 μA V
CE
=30V, I
B
=0
Emitter Cut-Off Current I
EBO
- - 0.05 μA V
EB
=5V, I
C
=0
h
FE(1)
100 - 300 V
CE
=1V, I
C
=10mA
DC Current Gain
h
FE(2)
60 - - V
CE
=1V, I
C
=50mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=50mA, I
B
=5mA
Base-Emitter Saturation Voltage V
BE(sat)
- - 0.95 V I
C
=50mA, I
B
=5mA
Transition Frequency f
T
300 - - MHz V
CE
=20V, I
C
=10mA, f=100MHz
Output Capacitance C
ob
- - 4 pF V
CB
=5V, I
E
=0, f=1MHz
Delay time Td - - 35 nS
Rise time Tr - - 35 nS
V
CC
=3V, V
BE
=0.5V,
I
C
=10mA, I
B1
=1mA
Storage time Ts - - 200 nS
Fall time Tf - - 50 nS
V
CC
=3V, I
C
=10mA,
I
B1
= I
B2
=1mA
SOT-363
Millimete
r
Millimete
r
REF.
Min. Max.
REF.
Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K
E 1.10 1.50 L 0.650 TYP.
F 0.10 0.35
B
L
F
HC
J
D G
K
A
E
K6N MA
Elektronische Bauelemente
MMDT3904
0.2A, 60V
NPN General Purpose Transistor
22-Nov-2013 Rev.D Page 2 of 2
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
CHARACTERISTIC CURVES