2SC1318A
0.5 A, 80 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
19-Jan-2011 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
r
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Collector output capacitance：
Cob=11 pF (TYP), 20 pF (MAX)
CLASSIFICATION OF h
FE(1)
Product-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S
Range 85~170 120~240 170~340
ABSOLUTE MAXIMUM RATINGS (T
A
= 25��C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
80 V
Collector to Emitter Voltage V
CEO
70 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
0.5 A
Collector Power Dissipation P
C
750 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
80 - - V I
C
= 10μA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
70 - - V I
C
= 2mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
= 10μA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 μA V
CB
= 20V, I
E
=0
DC Current Gain
h
FE(1)
85 - 340 V
CE
= 10V, I
C
= 0.15A
h
FE(2)
40 - - V
CE
= 10V, I
C
= 0.5A
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.6 V I
C
= 300mA, I
B
= 30mA
Base to Emitter Voltage V
BE(sat)
- - 1.5 V I
C
= 300mA, I
B
= 30mA
Transition Frequency f
T
- 120 - MHz V
CE
= 10V, I
C
= 50mA, f=200MHz
Collector Output Capacitance C
ob
- 11 20 pF V
CB
= 10V, I
E
=0, f=1MHz
TO-92
REF.
Millimete
r
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G1.27 TYP.
H1.10 -
J 2.42 2.66
K 0.36 0.76
A
CE
K
F
D
B
G
H
J
Emitte
r
Collector
Base
