Elektronische Bauelemente
SSD15N10
15A, 100V, R
DS(ON)
110mΩ
N-Ch Enhancement Mode Power MOSFET
07-Mar-2013 Rev. E Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
TO-252(D-Pack)
A
C
D
N
O
P
G E
FHK
J
M
B
15N10
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10 provide the designer with the best
combination of fast switching. The TO-252 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
R
DS(on)
≦ 100mΩ @ V
GS
= 10V
Super high density cell design for extremely low R
DS(on)
Exceptional on-resistance and maximum DC current
capability
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
100 V
Gate-Source Voltage V
GS
±20 V
T
C
=25°C 15 A
Continuous Drain Current
T
C
=70°C
I
D
13.8 A
Pulsed Drain Current
1
I
DM
24 A
T
C
=25°C 44.6 W
Power Dissipation
T
A
=25°C
P
D
2 W
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 ~ 150 °C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
mount)
3
R
θJA
62.5 °C / W
Maximum Thermal Resistance Junction-Case R
θJC
2.8 °C / W
Millimete
r
Millimete
r
REF.
Min. Max.
REF.
Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
Gate
Source
Drain
Date Code
Elektronische Bauelemente
SSD15N10
15A, 100V, R
DS(ON)
110mΩ
N-Ch Enhancement Mode Power MOSFET
07-Mar-2013 Rev. E Page 2 of 4
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-Source Breakdown Voltage BV
DSS
100 - - V V
GS
=0, I
D
=250μA
Gate Threshold Voltage V
GS(th)
1.0 - 2.5 V V
DS
=V
GS
, I
D
=250μA
Gate-Source Leakage Current I
GSS
- - ±100 nA V
GS
= ±20V
Drain-Source Leakage Current I
DSS
- - 1 μA V
DS
=80V, V
GS
=0
Static Drain-Source On-Resistance
2
R
DS(ON)
- 100 110 mΩ V
GS
=10V, I
D
=8A
Total Gate Charge
2
Q
g
- 26.2 -
Gate-Source Charge Q
gs
- 4.6 -
Gate-Drain (“Miller”) Change Q
gd
- 5.1 -
nC
I
D
=10A
V
DS
=80V
V
GS
=10V
Turn-on Delay Time
2
T
d(on)
- 4.2 -
Rise Time T
r
- 8.2 -
Turn-off Delay Time T
d(off)
- 35.6 -
Fall Time T
f
- 9.6 -
nS
V
DS
=50V
I
D
= 10A
V
GS
=10V
R
L
=5Ω
R
G
=3.3Ω
Input Capacitance C
iss
- 1535 -
Output Capacitance C
oss
- 60 -
Reverse Transfer Capacitance C
rss
- 37 -
pF
V
GS
=0
V
DS
=15V
f=1.0MHz
Gate Resistance R
g
- 2 - Ω f=1.0MHz
Source-Drain Diode
Forward On Voltage
2
V
SD
- - 1.2 V I
S
=8.0A, V
GS
=0V
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test.
3. Surface Mounted on 1 in
2
copper pad of FR4 Board.