Elektronische Bauelemente
SSD15P10
-15A, -100V, R
DS(O)
90mΩ
P-Ch Enhancement Mode Power MOSFET
01-Jun-2017 Rev. A Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
TO
-
252(D
-
Pack)
15P10
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15P10 is the highest performance trench
P-ch MOSFETs with extreme high cell density , which
provide excellent R
DS(ON)
and gate charge for most of the
synchronous buck converter applications.
The SSD15P10 meet the RoHS and Green Product with
Function reliability approved.
FEATURES
R
DS(on)
≦90mΩ @V
GS
= -10V
R
DS(on)
≦110mΩ @V
GS
= -4.5V
Advanced high Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
TO-252 Package
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
-100 V
Gate-Source Voltage V
GS
±20 V
T
C
=25°C -15 A
Continuous Drain Current, @V
GS
=10V
1
T
C
=100°C
I
D
-10 A
Pulsed Drain Current
2
I
DM
-60 A
Power Dissipation
1
T
C
=25°C P
D
50 W
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 ~ 175 °C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
1
(Max). 75
Maximum Thermal Resistance Junction-Ambient
R
θJA
132
Maximum Thermal Resistance Junction-Case
1
(Max).
R
θJC
3
°C / W
A
C
D
N
O
P
G E
FHK
J
M
B
Millimeter
Millime
ter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.
35
6.90
J
2.336 REF.
B
4.95
5.53
K
0.89 REF.
C
2.10
2.50
M
0.45
1.14
D
0.665 Typ.
N
1.55 Typ.
E
6.0
7.5
O
0
0.13
F
2.90 REF
P
0.58 REF.
G
5.40
6.40
H
0.60
1.20
1
Gate
3
Source
2
Drain
Date Code
Elektronische Bauelemente
SSD15P10
-15A, -100V, R
DS(O)
90mΩ
P-Ch Enhancement Mode Power MOSFET
01-Jun-2017 Rev. A Page 2 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise specified)
Parameter Symbol Min.
Typ.
Max.
Unit
Test conditions
Drain-Source Breakdown Voltage BV
DSS
-100
- - V V
GS
=0, I
D
= -250µA
Gate Threshold Voltage V
GS(th)
-1 - -2.5 V V
DS
=V
GS
, I
D
= -250µA
Forward Transfer conductance g
fs
- 11 - S V
DS
= -10V, I
D
= -4A
Gate-Source Leakage Current I
GSS
- - ±100
nA V
GS
= ±20V
- - -1 V
DS
= -80V, V
GS
=0, T
J
=25°C
Drain-Source Leakage Current I
DSS
- - -25
µA
V
DS
= -80V, V
GS
=0, T
J
=125°C
- - 90 V
GS
= -10V, I
D
= -4.5A
Static Drain-Source On-Resistance
3
R
DS(ON)
- - 110
mΩ
V
GS
= -4.5V, I
D
= -4A
Total Gate Charge Q
g
- 13.3
- V
GS
= -4.5V
Total Gate Charge Q
g
- 29.2
-
Gate-Source Charge Q
gs
- 4 -
Gate-Drain Change Q
gd
- 8.5 -
nC
I
D
= -15A
V
DS
= -80V
V
GS
= -10V
Turn-on Delay Time T
d(on)
- 8.8 -
Rise Time T
r
- 17.2
-
Turn-off Delay Time T
d(off)
- 86.2
-
Fall Time T
f
- 63 -
nS
V
DD
= -50V
I
D
= -1A
V
GS
= -10V
R
G
=6Ω
Input Capacitance C
iss
- 1726
-
Output Capacitance C
oss
- 104 -
Reverse Transfer Capacitance C
rss
- 71 -
pF
V
GS
=0
V
DS
= -25V
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
1
I
S
- - -15 A
Continuous Source Current
2
I
SM
- - -60 A
Forward On Voltage
3
V
SD
- - -1.2 V I
S
= -2A, V
GS
=0
Reverse Recovery Time T
rr
- 28.8
- nS
Reverse Recovery Charge Q
rr
- 40.9
- nC
I
F
= -15A, dl/dt=100A/µs
T
J
=25°C
Notes:
1. The date tested by surface mounted on a 1 inch
2
FR-4 board with 2oz copper.
2. The power dissipation is limited by 150°C junction temperature.
3. The data tested by pulsed, pulse width 300us,duty cycle 2%≦ ≦ .