MMBD1501A~ MMBD1505A
Plastic-Encapsulated Diode
Elektronische Bauelemente
30-Nov-2010 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High conductance Low Leakage Diode
MARKING
Part
Name
MMBD1501A MMBD1503A MMBD1504A MMBD1505A
Marking
A11 A13 A14 A15
Circuit
ABSOLUTE MAXIMUM RATINGS (@ Ta = 25°C)
PARAMETER SYMBOL LIMITS UNIT
Working Inverse Voltage V
R
200 V
DC Forward Current I
F
600 mA
Average Rectifying Current I
O
200 mA
Total Device Dissipation P
D
350 mW
Thermal Resistance, Junction to Ambient R
θJA
357 °C/W
Surge Current
1 s
I
SURGE
1 A
1 microsecond
2 A
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise specified)
Parameters Symbol Min. Max. Unit Test Conditions
Reverse Breakdown Voltage V
(BR)
200 - V I
R
=5µA
Reverse voltage leakage current I
R
- 10 nA V
R
=180V
Forward Voltage
V
F1
- 0.75 V I
F
= 1 mA
V
F2
- 0.85 V I
F
= 10 mA
V
F3
- 0.95 V I
F
= 50 mA
V
F4
- 1.1 V I
F
= 100 mA
V
F5
- 1.3 V I
F
= 200 mA
V
F6
- 1.5 V I
F
= 300 mA
Diode Capacitance C
D
- 4 pF V
R
= 0, f = 1 MHz
SO
T
-23
REF.
Millimete
r
REF.
Millimete
r
Min. Max. Min. Max.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
