1
C2M0160120D Rev.
C, 10-2015
C2M0160120D
Silicon Carbide Power MOSFET
C2M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benets
• HigherSystemEciency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• LED Lighting Power Supplies
Package
TO-247-3
Part Number Package
C2M0160120D TO-247-3
V
DS
1200 V
I
D
@
25˚C
19 A
R
DS(on)
160 mΩ
Maximum Ratings (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
DSmax
Drain - Source Voltage 1200 V
V
GS
=
0 V, I
D
=100μA
V
GSmax
Gate - Source Voltage -10/+25 V Absolute maximum values
V
GSop
Gate - Source Voltage -5/+20 V Recommended operational values
I
D
Continuous Drain Current
19
A
V
GS
= 20 V, T
C
=25˚C
Fig. 19
12.5
V
GS
= 20 V, T
C
=100˚C
I
D(pulse)
Pulsed Drain Current 40 A
Pulse width t
P
limited by T
jmax
Fig. 22
P
D
Power Dissipation 125 W T
C
=25˚C,T
J
=150˚C Fig. 20
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+150
˚C
T
L
Solder Temperature 260 ˚C 1.6mm(0.063”)fromcasefor��10s
M
d
Mounting Torque
1
8.8
Nm
lbf-in
M3 or 6-32 screw
2
C2M0160120D Rev.
C, 10-2015
Electrical Characteristics (T
C
=25˚Cunlessotherwisespeci���ed)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V
(BR)DSS
Drain-Source Breakdown Voltage 1200 V V
GS
=
0 V, I
D
=100μA
V
GS(th)
Gate Threshold Voltage
2.0 2.6 4
V
V
DS
= V
GS
, I
DS
= 2.5 mA
Fig. 11
2.1
V
V
DS
= V
GS
, I
DS
= 2.5 mA, T
J
= 150ºC
I
DSS
Zero Gate Voltage Drain Current 1 100 μA V
DS
= 1200 V, V
GS
= 0 V
I
GSS
Gate-Source Leakage Current 250 nA V
GS
= 20 V, V
DS
= 0 V
R
DS(on)
Drain-Source On-State Resistance
160 196
mΩ
V
GS
= 20 V, I
D
= 10 A
Fig. 4,
5, 6
290 V
GS
= 20 V, I
D
= 10A, T
J
= 150ºC
g
fs
Transconductance
4.8
S
V
DS
=
20 V, I
DS
=
10 A
Fig. 7
4.3 V
DS
=
20 V, I
DS
=
10 A, T
J
= 150ºC
C
iss
Input Capacitance 525
pF
V
GS
= 0 V
V
DS
= 1000 V
f=1MHz
V
AC
= 25 mV
Fig. 17,
18
C
oss
Output Capacitance 47
C
rss
ReverseTransferCapacitance 4
E
oss
C
oss
Stored Energy 25 μJ Fig. 16
E
AS
Avalanche Energy, Single Pluse 600 mJ I
D
= 10A, V
DD
= 50V Fig. 29
E
ON
Turn-On Switching Energy 79
μJ
V
DS
= 800 V, V
GS
= -5/20 V, I
D
= 10A,
R
G(ext)
=2.5Ω,L=256μH
Fig. 25
E
OFF
TurnOSwitchingEnergy 57
t
d(on)
Turn-On Delay Time 9
ns
V
DD
= 800 V, V
GS
= -5/20 V
I
D
= 10 A
R
G(ext)
=2.5Ω,R
L
=80Ω
Timing relative to V
DS
Per IEC60747-8-4 pg 83
Fig. 27
t
r
Rise Time 11
t
d(o)
Turn-ODelayTime 16
t
f
Fall Time 10
R
G(int)
Internal Gate Resistance 6.5 Ω f=1MHz
,
V
AC
=
25 mV
Q
gs
Gate to Source Charge 7
nC
V
DS
= 800 V, V
GS
= -5/20 V
I
D
= 10 A
Per IEC60747-8-4 pg 21
Fig. 12Q
gd
Gate to Drain Charge 14
Q
g
Total Gate Charge 34
Reverse Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
SD
Diode Forward Voltage
3.3
V
V
GS
= -5 V, I
F
=
5 A
Fig. 8,9,
10
3.1 V
GS
= -5V, I
F
=
5 A,
T
J
= 150 ºC
I
S
Continuous Diode Forward Current 19 A T
C
=25˚C Note 1
t
rr
Reverse Recovery Time 23 ns
V
GS
= - 5 V, I
SD
= 10 A, V
R
= 800 V
dif/dt=3200A/µs
Note 1
Q
rr
Reverse Recovery Charge 105 nC
I
rrm
Peak Reverse Recovery Current 9 A
Note(1):WhenusingSiCBodyDiodethemaximumrecommendedV
GS
= -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
ThermalResistancefromJunctiontoCase 0.9 1.0
K/W Fig. 21
R
θJA
Thermal Resistance From Junction to Ambient 40