UNISONIC TECHNOLOGIES CO., LTD
15N10
Power MOSFET
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Copyright © 2016 Unisonic Technologies Co., Ltd QW-R502-846.C
14.7A, 100V (D-S) N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 15N10 is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge.
The UTC 15N10 is suitable for high efficiency switching DC/DC
converter, LCD display inverter and load switch.
FEATURES
* R
DS(ON)
=0.08 @V
GS
=10V,I
D
=8A
* Low gate charge (Typ=24nC)
* Low C
RSS
(Typ=23pF)
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
Package
1 2 3
Packing
15N10L-TM3-T 15N10G-TM3-T TO-251 G D S Tube
15N10L-TN3-R 15N10G-TN3-R TO-252 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
15N10 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (T
A
=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
±20 V
T
C
=25°C, T
J
=150°C 14.7 A
Continuous
T
C
=70°C, T
J
=150°C
I
D
13.6 A
Drain Current
Pulsed I
DM
59 A
T
C
=25°C 34.7 W
Power Dissipation
T
C
=70°C
P
D
22.2 W
Operating Junction Temperature T
J
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARAC TERI STICS (T
A
=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Junction to Case (Note)
JC
3.6 °C/W
Note: The device mounted on 1in
2
FR4 board with 2 oz copper.
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 100 V
Drain-Source Leakage Current I
DSS
V
DS
=80V, V
GS
=0V 1 µA
V
GS
=+20V, V
DS
=0V +100 nA
Gate-Source Leakage Current I
GSS
V
GS
=-20V, V
DS
=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250µA 1.0 3.0 V
Drain-Source On-State Resistance (Note) R
DS(ON)
V
GS
=10V, I
D
=8A 80 100 m
DYNAMIC PARAMETERS
Input Capacitance C
ISS
890 pF
Output Capacitance C
OSS
58 pF
Reverse Transfer Capacitance C
RSS
V
GS
=0V, V
DS
=15V, f=1MHz
23 pF
SWITCHING PARAMETERS
Total Gate Charge Q
G
V
GS
=10V, V
DS
=80V, I
D
=10A 24 nC
Total Gate Charge Q
G
13 nC
Gate to Source Charge Q
GS
4.6 nC
Gate to Drain Charge Q
GD
V
GS
=4.5V, V
DS
=80V, I
D
=10A
7.6 nC
Gate-Resistance R
G
V
DS
=0V, V
GS
=0V, f=1MHz 0.9
Turn-ON Delay Time t
D(ON)
14 ns
Rise Time t
R
33 ns
Turn-OFF Delay Time t
D(OFF)
39 ns
Fall-Time t
F
V
DS
=50V, R
L
=5, V
GEN
=10V,
R
G
=1
5 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage V
SD
I
S
=8A, V
GS
=0V 0.9 1.2 V
Note: Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.