UNISONIC TECHNOLOGIES CO., LTD
MCK100
Preliminary SCR
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SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
The UTC MCK100 is a sensitive gate silicon controlled rectifiers
reverse blocking thyristor. It provides the customers with high surge
current capability, high blocking voltage to 600 V and high switching
speed.
The UTC MCK100 is suitable for sensing and detection circuits
and high volume line – powered consumers applications.
FEATURES
* High Surge Current Capability
* High Blocking Voltage to 600 V
* On–State Current Rating of 0.8 A RMS @ T
C
=80°C
* High Switching Speed (20 V/μs Minimum @ T
C
=110°C)
* Reliability and Uniformity
SYMBOL
ORDERING INFORMATION
Ordering Number Package
Pin assignment
Packing
1 2 3
MCK100G-x-xx-AB3-R SOT-89 K A G Tape Reel
Note: Pin assignment: G: Gate A: Anode K: Cathode
MARKING
MCK100 Preliminary SCR
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ABSOLUTE MAXIMUM RATINGS (T
J
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Peak Repetitive Off-State Voltage(Note 2)
(T
J
=-40 ~ 110°C, Sine Wave, 50 ~ 60Hz,
Gate Open)
MCK100-3
V
DRM
V
RRM
100
V
MCK100-4 200
MCK100-6 400
MCK100-8 600
Peak Gate Voltage – Reverse(T
A
=25°C, Pulse Width1.0s) V
GRM
5.0 V
On-Sate RMS Current (T
C
=80°C) 180°C Condition Angles I
T
(
RMS
)
0.8 A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°C)
I
TSM
10 A
Peak Gate Current-Forward (T
A
=25°C, Pulse Width1.0s) I
GM
1.0 A
Circuit Fusing Considerations (t=8.3 ms) I
2
t 0.415 A
2
s
Forward Peak Gate Power (T
A
=25°C, Pulse Width 1.0s) P
GM
2 W
Forward Average Gate Power (T
A
=25°C, t=8.3ms) P
G
(
AV
)
0.1 W
Operating Junction Temperature @ Rated V
RRM
and V
DRM
T
J
-40 ~ 125 °C
Storage Temperature T
STG
-40 ~ 150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
2. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θ
JA
200 °C/W
Junction to Case θ
JC
75 °C/W
ELECTRICAL CHARACTERISTICS(T
J
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1)
T
C
=25°C
I
DRM
I
RRM
V
D
=Rated V
DRM
and V
RRM
,
R
GK
=1kΩ
10
μA
T
C
=110°C 100
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 3) V
TM
I
TM
=1A Peak @ T
A
=25°C 1.7 V
Gate Trigger Current (Continuous dc) (Note2) I
GT
V
AK
=7.0V, R
L
=100Ω, T
C
=25°C 40 200 μA
Holding Current (Note 3)
T
C
=25°C
I
H
V
AK
=7V, initiating
current=20mA
0.5 5.0
mA
T
C
=-40°C 10
Latch Current
T
C
=25°C
I
L
V
AK
=7V, I
G
=200μA
0.6 10
mA
T
C
=-40°C 15
Gate Trigger Current
(continuous dc) (Note 2)
T
C
=25°C
V
GT
V
AK
=7V, R
L
=100Ω
0.62 0.8
V
T
C
=-40°C 1.2
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dV/dt
V
D
=Rated V
DRM
, Exponential
Waveform, R
GK
=1000Ω,
T
J
=110°C
20 35 V/μs
Critical Rate of Rise of On-State Current di/dt
I
PK
=20A, P
W
=10μs,
diG/dt=1A/μs, Igt=20mA
50 A/μs
Notes: 1. R
GK
=1000Ω included in measurement.
2. Does not include R
GK
in measurement.
3. Indicates Pulse Test Width1.0ms, duty cycle 1%