UNISONIC TECHNOLOGIES CO., LTD
2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
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Copyright © 2014 Unisonic Technologies Co., Ltd QW-R208-049.D
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses
UTC’s advanced technol og y to provide the customers with high BV
CEO
and high DC current gain, etc.
The UTC 2SA1013 is suitable for power switching and color TV
vertical deflection output, etc.
FEATURES
* High BV
CEO
* High DC current gain
* Large continuous collector current capability
ORDERING INFORMATION
Ordering Number
Package
Pin assignment
Packing
Lead Free Halogen Free 1 2 3
- 2SA1013G-x-AB3-R SOT-89 B C E Tape Reel
2SA1013L-x-T92-B 2SA1013G-x-T92-B
TO-92
E C B
Tape Box
2SA1013L-x-T92-K 2SA1013G-x-T92-K
TO-92
E C B
Bulk
2SA1013L-x-T9N-B 2SA1013G-x-T9N-B TO-92NL E C B Tape Box
2SA1013L-x-T9N-K 2SA1013G-x-T9N-K TO-92NL E C B Bulk
Note: Pin Assignment: B: Base C: Collector E: Emitter
MARKING
SOT-89 TO-92 TO-92NL
UTC
2SA1013
Data Code
L: Lead Free
G: Halogen Free
2SA1013 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R208-049.D
ABSOLUTE MAXIMUM RATINGS (T
A
=25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-160 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current I
C
-1 A
Base Current I
B
-0.5 A
Collector Power Dissipation
SOT-89
P
C
500 W
TO-92/TO-92NL 900 W
Junction Temperature T
J
150 °C
Storage Temperature T
STG
-55 ~150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
ELECTRICAL CHARACTERISTICS (T
A
=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current
I
CBO
V
CB
=-150V, I
E
=0
-1.0 µA
Emitter Cut-Off Current
I
EBO
V
EB
=-6V, I
C
=0
-1.0 µA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-160 V
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-200mA 60 320
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-1.5 V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-5mA
-0.45 -0.75 V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-200mA
15 50 MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
35 pF
CLASSIFICATION OF h
FE
RANK R O P
RANGE 60~120 100~200 160~320