UNISONIC TECHNOLOGIES CO., LTD
MMDT5401
Preliminary
DUAL TRANSISTOR
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Copyright © 2014 Unisonic Technologies Co., Ltd QW-R218-021.c
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC MMDT5401 is a high voltage fast-switching dual
PNP transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
FEATURES
* High Collector-Emitter Voltage: V
CEO
= -150V
* High current gain
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number Package
Pin Assignment
Packing
1234 5 6
MMDT5401G-AL6-R SOT-363 E1 B1 C2 E2 B2 C1 Tape Reel
MARKING
MMDT5401
Preliminary
DUAL TRANSISTOR
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www.unisonic.com.tw QW-R218-021.c
ABSOLUATE MAXIUM RATINGS (T
A
=25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector -Base Voltage V
CBO
-160 V
Collector -Emitter Voltage V
CEO
-150 V
Emitter -Base Voltage V
EBO
-5 V
DC Collector Current I
C
-600 mA
Power Dissipation P
D
200 mW
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-40 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless oth erwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage V
CBO
I
C
=-100A, I
E
=0 -160 V
Collector-Emitter Breakdown Voltage V
CEO
I
C
=-1mA, I
B
=0 -150 V
Emitter-Base Breakdown Voltage V
EBO
I
E
=-10A, I
C
=0 -5 V
Collector Cut-off Current I
CBO
V
CB
=-120V, I
E
=0 -50 nA
Emitter Cut-off Current I
EBO
V
BE
=-3V, I
C
=0 -50 nA
DC Current Gain(note) h
FE
V
CE
=-5V, I
C
=-1mA 80
V
CE
=-5V, I
C
=-10mA 80 160 400
V
CE
=-5V, I
C
=-50mA 80
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=-10mA, I
B
=-1mA -0.2
V
I
C
=-50mA, I
B
=-5mA -0.5
Base-Emitter Saturation Voltage V
BE(SAT)
I
C
=-10mA, I
B
=-1mA -1
V
I
C
=-50mA, I
B
=-5mA -1
Current Gain Bandwidth Product f
T
V
CE
=-10V, I
C
=-10mA, f=100MHz 100 300 MHz
Output Capacitance C
ob
V
CB
=-10V, I
E
=0, f=1MHz 6.0 pF
Noise Figure NF
I
C
=-0.25mA, V
CE
=-5V
R
S
=1k, f=10Hz ~ 15.7kHz
8 dB
Note: Pulse test: PW<300s, Duty Cycle<2%