MMDT3904 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R218-013.C
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current - Continuous I
C
200 mA
Power Dissipation P
D
200 mW
Thermal Resistance, Junction to Ambient θ
JA
625 °C/W
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage V
BR
CBO
I
C
= 10μA, I
E
= 0 60 V
Collector-Emitter Breakdown Voltage V
BR
CEO
I
C
= 1.0mA, I
B
= 0 40 V
Emitter-Base Breakdown Voltage V
BR
EBO
I
E
= 10μA, I
C
= 0 6 V
Collector Cut-off Current I
CE
V
CE
= 30V, V
EB
OFF
= 3.0V 50 nA
Base Cut-off Current I
BL
V
CE
= 30V, V
EB
OFF
= 3.0V 50 nA
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
I
C
= 100μA, V
CE
= 1.0V 40
I
C
= 1.0mA, V
CE
= 1.0V 70
I
C
= 10mA, V
CE
= 1.0V 100 300
I
C
= 50mA, V
CE
= 1.0V 60
I
C
= 100mA, V
CE
= 1.0V 30
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 10mA, I
B
= 1.0mA 0.20 V
I
C
= 50mA, I
B
= 5.0mA 0.30 V
Base- Emitter Saturation Voltage V
BE(sat)
I
C
= 10mA, I
B
= 1.0mA 0.65 0.85 V
I
C
= 50mA, I
B
= 5.0mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
OB
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0 4.0 pF
Current Gain-Bandwidth Product f
T
V
CE
= 20V, I
C
= 10mA, f = 100MHz 300 MHz
Turn On Time t
ON
V
CC
=3V,V
BE
=0.5V,
I
C
=10mA,I
B1
=1mA
70 ns
Turn Off Time t
OFF
I
B
1=1
B
2=1mA 250 ns
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%.