UNISONIC TECHNOLOGIES CO., LTD
MMDT2907A
Preliminary DUAL TRANSISTOR
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Copyright © 2016 Unisonic Technologies Co., Ltd QW-R218-028.c
Dual PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC MMDT2907A is an Dual PNP general purpose amplifier.
it’s suitable for a medium power amplifier and switch requiring
collector currents up to 500mA.
FEATURES
* Low V
CE(SAT
* High collector current gain under high collector current condition
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Pin Assignment
Ordering Number Package
1 2 3 4 5 6
Packing
MMDT2907AG-AL6-R SOT-363 E1 B1 C2 E2 B2 C1 Tape Reel
MMDT2907AG-AL6-R
(1)Packing Type
(2)Package Type
(1) R: Tape Reel
(2) AL6: SOT-363
(3) G: Halogen Free and Lead Free
(3)Green Package
MARKING
MMDT2907A Preliminary DUAL TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R218-028.c
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C, unless otherwise noted) (Note 1, 2)
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage V
CEO
-30 V
Collector-Base Voltage V
CBO
-60 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current - Continuous I
C
-500 mA
Total Device Dissipation 300 mW
Derate above 25°C
P
D
2.4 mW/°C
Junction Temperature T
J
-55 ~ +150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
THERMAL DATA (T
A
=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance, Junction to Ambient θ
JA
415 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise noted) (Note 2)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V
(BR)CEO
I
C
=-10mA, I
B
=0 -30 V
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
=-10µA, I
E
=0 -60 V
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
=-10µA, I
C
=0 -5.0 V
Collector Cutoff Current I
CBO
V
CB
=-50V, I
E
=0 -30 nA
Emitter Cutoff Current I
EBO
V
EB
=-3.0V, I
C
=0 -30 nA
ON CHARACTERISTICS
I
C
=-1.0mA, V
CE
=-10V 50
I
C
=-10mA, V
CE
=-10V 75
I
C
=-150mA, V
CE
=-10V (Note 1) 100
DC Current Gain h
FE
I
C
=-300mA, V
CE
=-10V (Note 1) 30
I
C
=-150mA, I
B
=-15mA -0.4 V
Collector-Emitter Saturation Voltage (Note 1) V
CE(sat)
I
C
=-300mA, I
B
=-30mA -1.4 V
Base-Emitter Saturation Voltage (Note 1) V
BE(sat)
I
C
=-150mA, I
B
=-15mA -1.3 V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product f
T
I
C
=-50mA, V
CE
=-20V,
f=100MHz
250 MHz
Output Capacitance C
OBO
V
CB
=-10V, I
E
=0, f=100kHz 4.0 pF
Input Capacitance C
IBO
V
EB
=-2.0V, I
C
=0, f=100kHz 12 pF
Noise Figure NF
I
C
=-100µA, V
CE
=-10V,
R
S
=1.0kΩ, f=1.0kHz
2.0 dB
SWITCHING CHARACTERISTICS
Turn-on Time t
ON
30 ns
Delay Time t
D
8.0 ns
Rise Time t
R
V
CC
=-30V, I
C
=-150mA,
I
B1
=-15mA
20 ns
Turn-off Time t
OFF
80 ns
Storage Time t
S
60 ns
Fall Time t
F
V
CC
=6.0V, I
C
=-150mA,
I
B1
=I
B2
=-15mA
20 ns
Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.