CHA6652-QXG
Ref. : DSCHA6652-QXG8162 - 11 Jun 18
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
21- 27.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6652-QXG is a three stage
monolithic GaAs high power circuit producing
2 Watt output power. It is highly linear, with
possible gain control and integrates a power
detector. ESD protections are included.
It is designed for Point To Point Radio.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
Broadband performances: 21- 27.5GHz
33dBm saturated power
41dBm OIP3
20dB gain
DC bias: Vd = 6.0Volt @ Id = 1.3A
QFN 6x5
MSL3
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21
27.5
GHz
Gain
Linear Gain
20
dB
Psat
Saturated output power
33
dBm
OIP3
Output IP3
41
dBm
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A6652
YYWW
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
14
16
18
20
22
24
26
28
30
32
34
36
18 19 20 21 22 23 24 25 26 27 28
Power (dBm) & PAE (%)
Frequency (GHz)
Psat
P1dB
PAE at Psat.
CHA6652-QXG
21- 27.5GHz Power Amplifier
Ref. : DSCHA6652-QXG8162 - 11 Jun 18
2/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Electrical Characteristics
Tamb.= +25°C, Vd = +6.0V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
21
27.5
GHz
Gain
Small Signal Gain in 21 - 24GHz
Small Signal Gain in 24.25 - 27.5GHz
22
20
dB
ΔG
Gain variation in temperature
± 0.03
dB/°C
Psat
Saturated Output Power in 21 - 24GHz
Saturated Output Power in 24.25 - 26.5GHz
Saturated Output Power in 26.75 - 27.5GHz
34.5
33
32.5
dBm
OIP3
Output IP3 in 21 - 26.5GHz
Output IP3 in 26.75 - 27.5GHz
41
39
dBm
PAE
PAE at saturation in 21 - 24GHz
PAE at saturation in 24.25 - 27.5GHz
25
18
%
CG
Gain control range
15
dB
Rlin
Input Return Loss in 21 - 24GHz
Input Return Loss in 24.25 - 27.5GHz
12
15
dB
Rlout
Output Return Loss
25
dB
NF
Noise figure at nominal gain
5
dB
Dr
Detection dynamic range(for output power
detection up to Psat)
30
dB
Vdetect
Voltage detection V
REF
- V
DET
up to Psat
10 to
1500
mV
Vg
DC gate Voltage
-0.65
V
Idq
Total drain current
1.3
A
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".