Features
Low RDS(on)
Fast Switching
Single Event Effect
(SEE) Hardened
Low Total Gate Charge
Simple
Drive Requirement
s
Ease of Paralleling
Hermetically
Sealed
Cerami
c
Eyelets
Electri
cally Isolated
Light
Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current
20*
A
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
19
I
DM
Pulsed Drain Current
80
P
D
@T
C
= 25°C Maximum Power Dissipation
75
W
Linear Derating Factor
0.6 W/°C
V
GS
Gate-to-Source Voltage
± 20 V
E
AS
Single Pulse Avalanche Energy
107
mJ
I
AR
Avalanche Current 20
A
E
AR
Repetitive Avalanche Energy
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt
5.5 V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
4.3 (Typical) g
°C
1 2017-12-21
*Current is limited by package
For footnotes refer to the page 2.
Description
IRHYS67130CM is part of the International Rectifier HiRel
family of products. IR HiRel R6 technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 90 (MeV/(mg/cm
2
). The
combination of low R
DS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
IRHYS67130CM
JANSR2N7588T3
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
PD-96986B
100V, N-CHANNEL
REF: MIL-PRF-19500/755
R
6
TECHNOLOGY
Part Number Radiation Level RDS(on) I
D
QPL Part Number
IRHYS67130CM 100 kRads(Si)
0.042
20A* JANSR2N7588T3
IRHYS63130CM 300 kRads(Si)
0.042
20A* JANSF2N7588T3
Product Summary
International Rectifier HiRel Products, Inc.
2 2017-12-21
Pre-Irradiation
IRHYS67130CM
JANSR2N7588T3
International Rectifier HiRel Products, Inc.
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
Junction-to-Case
––– ––– 1.67
°C/W
R
JA
Junction-to-Ambient (Typical Socket Mount)
––– ––– 80
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1.0mA
R
DS(on)
Static Drain-to-Source On-
Resistance
––– ––– 0.042
V
GS
= 12V, I
D
= 19A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -8.72 ––– mV/°C
gfs
Forward Transconductance 14 ––– ––– S V
DS
= 15V, I
D
= 19A
I
DSS
Zero Gate Voltage Drain Current
––– ––– 10
µA
V
DS
= 80V, V
GS
= 0V
––– ––– 25 V
DS
= 80V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Leakage Forward ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Leakage Reverse ––– ––– -100 V
GS
= -20V
Q
G
Total Gate Charge ––– ––– 50
nC
I
D
= 20A
Q
GS
Gate-to-Source Charge ––– ––– 15 V
DS
= 50V
Q
GD
Gate-to-Drain (‘Miller’) Charge ––– ––– 12
V
GS
= 12V
t
d(on)
Turn-On Delay Time ––– ––– 20
ns
V
DD
= 50V
t
r
Rise Time ––– ––– 50 I
D
= 20A
t
d(off)
Turn-Off Delay Time ––– ––– 35
R
G
= 7.5
t
f
Fall Time ––– ––– 15
V
GS
= 12V
Ls +L
D
Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internal-
ly bonded from Source pin to Drain pad
C
iss
Input Capacitance ––– 1710 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 343 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 6.5 –––
ƒ = 1.0MHz
R
G
Gate Resistance ––– 1.1 –––
ƒ = 1.0MHz, open drain
V
DS
= V
GS
, I
D
= 1.0mA
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) ––– ––– 20*
I
SM
Pulsed Source Current (Body Diode) ––– ––– 80
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C,I
S
= 20A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– ––– 250 ns
T
J
= 25°C ,I
F
= 20A, V
DD
25V
Q
rr
Reverse Recovery Charge ––– ––– 2.7 µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
* Current is limited by package
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 25V, starting T
J
= 25°C, L = 0.54mH, Peak I
L
= 20A, V
GS
= 12V
I
SD
20A, di/dt 575A/µs, V
DD
100V, T
J
150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with V
GS
Bias: 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias: 80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.