VS-70MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Oct-17
1
Document Number: 94469
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
•HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
•Al
2
O
3
BDC
• Very low stay inductance design for high speed operation
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
PRIMARY CHARACTERISTICS
V
CES
600 V
V
CE(on)
typical at V
GE
= 15 V 2.1 V
I
C
at T
C
= 78 °C 70 A
Speed 30 kHz to 150 kHz
Package MTP
Circuit configuration Half bridge
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 100
A
T
C
= 78 °C 70
Pulsed collector current I
CM
300
Peak switching current I
LM
300
Diode continuous forward current I
F
T
C
= 78 °C 53
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation, IGBT P
D
T
C
= 25 °C 347
W
T
C
= 100 °C 139
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 500 μA 600 - - V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 70 A - 2.1 2.4
V
V
GE
= 15 V, I
C
= 140 A - 2.8 3.4
V
GE
= 15 V, I
C
= 70 A, T
J
= 150 °C - 2.7 3
Gate threshold voltage V
GE(th)
I
C
= 0.5 mA 3 - 6
Collector to emitter leaking current I
CES
V
GE
= 0 V, I
C
= 600 V - - 0.7
mA
V
GE
= 0 V, I
C
= 600 V, T
J
= 150 °C - - 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
VS-70MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Oct-17
2
Document Number: 94469
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
T
0
, T
1
are thermistor´s temperatures
(2)
, temperature in Kelvin
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 70 A
V
CC
= 480 V
V
GE
= 15 V
- 460 690
nCGate to emitter charge (turn-on) Q
ge
- 160 250
Gate to collector charge (turn-on) Q
gc
- 70 130
Turn-on switching loss E
on
R
g
= 10
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, T
J
= 25 °C
-1.1-
mJ
Turn-off switching loss E
off
-0.9-
Total switching loss E
ts
-2-
Turn-on switching loss E
on
R
g
= 10
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, T
J
= 150 °C
-1.27-
Turn-off switching loss E
off
-1.13-
Total switching loss E
ts
-2.4-
Turn-on delay time td
on
R
g
= 10
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery
- 314 -
ns
Rise time t
r
-49-
Turn-off delay time td
off
- 308 -
Fail time t
f
-68-
Turn-on delay time td
on
R
g
= 10
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, T
J
= 150 °C
- 312 -
Rise time t
r
-50-
Turn-off delay time td
off
- 320 -
Fail time t
f
-78-
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 8000 -
pFOutput capacitane C
oes
- 790 -
Reverse transfer capacitance C
res
- 110 -
Reverse BIAS safe operating area RBSOA
T
J
= 150 °C, I
C
= 300 A
V
CC
= 400 V, V
P
= 600 V
R
g
= 22 , V
GE
= + 15 V to 0 V
Fullsquare
THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
0
(1)
T
0
= 25 °C - 30 - k
Sensitivity index of the
thermistor material
(1)(2)
T
0
= 25 °C
T
1
= 85 °C
- 4000 - K
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop V
FM
I
C
= 70 A, V
GE
= 0 V - 1.64 2.1
VI
C
= 140 A, V
GE
= 0 V - 2.1 2.4
I
C
= 70 A, V
GE
= 0 V, T
J
= 150 °C - 1.69 1.9
Diode reverse recovery time t
rr
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/μs
- 96 126 ns
Diode peak reverse current I
rr
- 9.4 12.8 A
Diode recovery charge Q
rr
- 440 750 nC
Diode reverse recovery time t
rr
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/μs
T
J
= 125 °C
- 140 194 ns
Diode peak reverse current I
rr
-1419A
Diode recovery charge Q
rr
- 950 1700 nC
R
0
R
1
------
1
T
0
-----
1
T
1
-----
–
exp=