VS-HFA25TB60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
1
Document Number: 96311
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
I
F(AV)
25 A
V
R
600 V
V
F
at I
F
1.3 V
t
rr
(typ.) 23 ns
T
J
max. 150 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Single
D
2
PAK (TO-263AB)
1
2
3
Anode
1
3
2
N/C
Base
cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 25
ASingle pulse forward current I
FSM
225
Maximum repetitive forward current I
FRM
100
Maximum power dissipation P
D
T
C
= 25 °C 125
W
T
C
= 100 °C 50
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA25TB60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
2
Document Number: 96311
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 25 A
See fig. 1
-1.31.7
I
F
= 50 A - 1.5 2.0
I
F
= 25 A, T
J
= 125 °C - 1.3 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.520
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 600 2000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 55 100 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 23 -
nst
rr1
T
J
= 25 °C
I
F
= 25 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-5075
t
rr2
T
J
= 125 °C - 105 160
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.5 10
A
I
RRM2
T
J
= 125 °C - 8.0 15
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 112 375
nC
Q
rr2
T
J
= 125 °C - 420 1200
Peak rate of fall recovery���
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 250 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction-to-case
R
thJC
--1.0
K/W
Thermal resistance,
junction-to-ambient
R
thJA
Typical socket mount - - 80
Weight
-2.0- g
-0.07- oz.
Marking device Case style D
2
PAK (TO-263AB) HFA25TB60S