VS-HFA04TB60-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96187
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA04TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 4 A continuous current, the
VS-HFA04TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA04TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
I
F(AV)
4 A
V
R
600 V
V
F
at I
F
1.4 V
t
rr
typ. 17 ns
T
J
max. 150 °C
Package 2L TO-220AC
Circuit configuration Single
2L TO-220AC
1
2
3
Anode
1
3
Cathode
Base
cathode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 4
ASingle pulse forward current I
FSM
25
Maximum repetitive forward current I
FRM
16
Maximum power dissipation P
D
T
C
= 25 °C 25
W
T
C
= 100 °C 10
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA04TB60-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
2
Document Number: 96187
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 4.0 A
See fig. 1
-1.51.8
I
F
= 8.0 A - 1.8 2.2
I
F
= 4.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
- 0.17 3.0
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 44 300
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 4.0 8.0 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 17 -
nst
rr1
T
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-2842
t
rr2
T
J
= 125 °C - 38 57
Peak recovery current
See fig. 7 and 8
I
RRM1
T
J
= 25 °C - 2.9 5.2
A
I
RRM2
T
J
= 125 °C - 3.7 6.7
Reverse recovery charge
See fig. 9 and 10
Q
rr1
T
J
= 25 °C - 40 60
nC
Q
rr2
T
J
= 125 °C - 70 105
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
dI
(rec)M
/dt1 T
J
= 25 °C - 280 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 235 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--5.0
K/W
Thermal resistance,
junction to ambient
R
thA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thS
Mounting surface, flat, smooth, and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC HFA04TB60