IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
S16-1522-Rev. D, 08-Aug-16
1
Document Number: 91274
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Low gate Charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and
avalanche voltage and current
• Effective C
oss
specified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 45 mH, R
g
= 25 , I
AS
= 2.5 A (see fig. 12).
c. I
SD
2.5 A, dI/dt 270 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 3.0
Q
g
max. (nC) 17
Q
gs
(nC) 4.3
Q
gd
(nC) 8.5
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
Available
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR420A-GE3 SiHFR420ATR-GE3
a
SiHFR420ATRL-GE3 SiHFU420A-GE3
Lead (Pb)-free IRFR420APbF IRFR420ATRPbF
a
IRFR420ATRLPbF IRFU420APbF
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.3
AT
C
= 100 °C 2.1
Pulsed Drain Current
a
I
DM
10
Linear Derating Factor 0.67 W/°C
Single Pulse Avalanche Energy
b
E
AS
140 mJ
Repetitive Avalanche Current
a
I
AR
2.5 A
Repetitive Avalanche Energy
a
E
AR
5.0 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
83 W
Peak Diode Recovery dV/dt
c
dV/dt 3.4 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
S16-1522-Rev. D, 08-Aug-16
2
Document Number: 91274
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.60 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.5 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 1.5 A
b
--3.0
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 1.5 A 1.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 340 -
pFOutput Capacitance C
oss
-53-
Reverse Transfer Capacitance C
rss
-2.7-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 490 -
pFV
DS
= 400 V, f = 1.0 MHz - 15 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c
-28-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 2.5 A, V
DS
= 400 V,
see fig. 6 and 13
b
--17
nC Gate-Source Charge Q
gs
--4.3
Gate-Drain Charge Q
gd
--8.5
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 2.5 A,
R
g
= 21 , R
D
= 97 , see fig. 10
b
-8.1-
ns
Rise Time t
r
-12-
Turn-Off Delay Time t
d(off)
-16-
Fall Time t
f
-13-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--3.3
A
Pulsed Diode Forward Current
a
I
SM
--10
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 2.5 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 2.5 A, dI/dt = 100 A/μs
b
- 330 500 ns
Body Diode Reverse Recovery Charge Q
rr
- 760 1140 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G