V3PAN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Oct-16
1
Document Number: 87909
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-221BC (SMPA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V
I
FSM
80 A
V
F
at I
F
= 3.0 A (T
A
= 125 °C) 0.40 V
T
J
max. 150 °C
Package DO-221BC (SMPA)
Diode variation Single die
DO-221BC (SMPA)
TMBS
®
SMPA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V3PAN50 UNIT
Device marking code 3N5
Maximum repetitive peak reverse voltage V
RRM
50 V
Maximum DC forward current I
F
(1)
3.0 A
Maximum DC reverse voltage V
DC
35 V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V3PAN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Oct-16
2
Document Number: 87909
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Note
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient; R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Currernt Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.40 -
V
I
F
= 3.0 A 0.47 0.54
I
F
= 1.5 A
T
A
= 125 °C
0.30 -
I
F
= 3.0 A 0.40 0.48
Reverse current
V
R
= 35 V
T
A
= 25 °C
I
R
(2)
8-μA
T
A
= 125 °C 8.8 - mA
V
R
= 50 V
T
A
= 25 °C - 600 μA
T
A
= 125 °C 12 35 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
480 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL V3PAN50 UNIT
Typical thermal resistance
R
JA
(1)
100
°C/W
R
JM
(1)
9
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V3PAN50-M3/I 0.032 I 14 000 13" diameter plastic tape and reel
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C) (D=duty cycle=0.5)
T
M
= 138 °C, R
thJM
= 9 °C/W
T
A
= 25 °C
R
thJA
= 100 °C/W
T
M
measured at cathode band
terminal PCB mount
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T t
p
T