600VCoolMOS™C7PowerTransistor

IPZ60R060C7

Rev.2.0,2015-11-30Final Data Sheet

PG-TO247-4

Drain

Pin 1

Gate

Pin 4

Power

Source

Pin 2

Driver

Source

Pin 3

1Description

CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.

600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ

MOSFETsupplierwithhighclassinnovation.

The600VC7isthefirsttechnologyeverwithR

DS(on)

*Abelow1Ohm*mm².

Features

•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)

•IncreasedMOSFETdv/dtruggednessto120V/ns

•IncreasedefficiencyduetobestinclassFOMR

DS(on)

oss

andR

DS(on)

•BestinclassR

DS(on)

/package

•Easytouse/drive

•Pb-freeplating,halogenfreemoldcompound

•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20

andJESD22)

•4pinkelvinsourceconcept

Benefits

•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe

application

•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency

•Enablinghighersystemefficiencybylowerswitchinglosses

•Increasedpowerdensitysolutionsduetosmallerpackages

•Suitableforapplicationssuchasserver,telecomandsolar

•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional

3pinpackage

Applications

PFCstagesandPWMstages(TTF,LLC)forhighpower/performance

SMPSe.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter Value Unit

@ T

j,max

650 V

DS(on),max

60 m

Ω

g.typ

68 nC

D,pulse

135 A

D,continuous

@ T

<150°C 54 A

oss

@400V 8.1 µJ

Body diode di/dt 400 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPZ60R060C7 PG-TO 247-4 60C7060 see Appendix A