IRF1404PbF
HEXFET
®
Power MOSFET
Seventh Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004Ω
I
D
= 202A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
04/11/12
www.irf.com 1
TO-220AB
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 202
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 143 A
I
DM
Pulsed Drain Current 808
P
D
@T
C
= 25°C Power Dissipation 333 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 620 mJ
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 1.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
PD-94968B
IRF1404PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250μA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω V
GS
= 10V, I
D
= 121A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250μA
g
fs
Forward Transconductance 76 ––– ––– S V
DS
= 25V, I
D
= 121A
––– ––– 20
μA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 131 196 I
D
= 121A
Q
gs
Gate-to-Source Charge ––– 36 ––– nC V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 37 56 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 17 ––– V
DD
= 20V
t
r
Rise Time ––– 190 ––– I
D
= 121A
t
d(off)
Turn-Off Delay Time ––– 46 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 33 ––– R
D
= 0.2Ω
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 5669 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1659 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 223 ––– ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 6205 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1467 ––– V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 2249 ––– V
GS
= 0V, V
DS
= 0V to 32V
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤ 121A, di/dt ≤ 130A/μs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 85μH
R
G
= 25Ω, I
AS
= 121A. (See Figure 12)
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.5 V T
J
= 25°C, I
S
= 121A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 78 117 ns T
J
= 25°C, I
F
= 121A
Q
rr
Reverse RecoveryCharge ––– 163 245 nC di/dt = 100A/μs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
202
808
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.