V2PM10
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-17
1
Document Number: 87527
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Mounted on 8.0 mm x 8.0 mm pad area
(3)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
θJA
PRIMARY CHARACTERISTICS
I
F(AV)
2 A
V
RRM
100 V
I
FSM
30 A
V
F
at I
F
= 2 A (125 °C) 0.62 V
T
J
max. 175 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V2PM10 UNIT
Device marking code 2MB
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F(AV)
(1)
1.5 A
I
F(AV)
(2)
2A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
(3)
, T
STG
-40 to +175 °C
V2PM10
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-17
2
Document Number: 87527
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width ≤ 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/ R
θJA
(2)
Free air, mounted on FR4 PCB, 2 oz. standard footprint, R
θJA
- junction to ambient
(3)
Mounted on PCB with 8.0 mm x 8.0 mm copper pad areas, R
θJM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.0 A T
A
= 25 °C
V
F
(1)
0.61 -
V
I
F
= 2.0 A T
A
= 25 °C 0.75 0.83
I
F
= 1.0 A T
A
= 125 °C 0.53 -
I
F
= 2.0 A T
A
= 125 °C 0.62 0.7
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
0.001 -
mA
T
A
= 125 °C 0.25 -
V
R
= 100 V
T
A
= 25 °C - 0.05
T
A
= 125 °C 0.5 2
Typical junction capacitance 4.0 V, 1 MHz C
J
150 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V2PM10 UNIT
Typical thermal resistance
R
θJA
(1)(2)
130
°C/W
R
θJM
(3)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V2PM10-M3/H 0.006 H 4500 7" diameter plastic tape and reel
V2PM10HM3/H
(1)
0.006 H 4500 7" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
= 148 °C, R
thJM
= 20 °C/W
T
A
= 25 °C, R
thJA
= 130 °C/W
T
M
measured at cathode terminal mount
typical values
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p