VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
1
Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS190-M3, VS-MBRS1100-M3 surface mount
Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
I
F(AV)
1 A
V
R
90 V, 100 V
V
F
at I
F
0.78 V
I
RM
1 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
1.0 mJ
Cathode
Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
90, 100 V
I
FSM
t
p
= 5 μs sine 870 A
V
F
1.0 A
pk
, T
J
= 125 °C 0.63 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS190-M3 VS-MBRS1100-M3 UNITS
Maximum DC reverse voltage V
R
90 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 147 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
870
10 ms sine or 6 ms rect. pulse 50
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A
VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
2
Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C 0.78
V
T
J
= 125 °C 0.62
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 1.0
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 42 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) 19/10
dP
tot
dT
J
-------------
1
R
thJA
--------------<